
Allicdata Part #: | IPL60R299CPAUMA1TR-ND |
Manufacturer Part#: |
IPL60R299CPAUMA1 |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11.1A 4VSON |
More Detail: | N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount P... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.94844 |
Vgs(th) (Max) @ Id: | 3.5V @ 440µA |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | PG-VSON-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.1A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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IPL60R299CPAUMA1 is an N-Channel enhancement mode Field Effect Transistor (FET). This type of FET is designed to operate as a power switching device in applications where it is necessary to switch substantial current and/or voltage. This type of MOSFETs is ideal for use in power switching applications such as motor controls, audio amplifiers and alarm systems.
The IPL60R299CPAUMA1 belongs to a series of FETs that are designed to provide a number of features that make them well suited for use in power switching applications. These features include low power consumption, low gate charge, and a high drain-source breakdown voltage.
The IPL60R299CPAUMA1 has a maximum drain-source voltage of 60V and a maximum drain-source current of 299A. It also has a threshold voltage of 1V and a maximum gate-source voltage of ±20V. It is package in a three-pin surface mount TO-220AB format.
The basic principle behind the operation of a FET is the same for all types of FETs. A voltage applied to the gate of the FET controls the current flow through the channel between the source and the drain. If the gate voltage is increased, the current flow increases and the drain voltage increases. The gate voltage also determines the maximum current that can flow through the channel.
The IPL60R299CPAUMA1 is designed to provide efficient power control applications and reliability. It features a low gate-to-source capacitance, low gate-charge, and a low drain-source on-state resistance. This makes it ideal for use in motor control and other switching applications.
The IPL60R299CPAUMA1 is an excellent choice for applications that require high current handling, high voltage tolerance, and high switching speed. This FET is also ideal for use in applications where a low power consumption and a reliable switching performance are desired.
This type of FET has many advantages over other types of transistors. It is a more reliable and efficient power switch compared to other types of transistors and is suitable for a wide range of applications.
Overall, the IPL60R299CPAUMA1 is an excellent choice for a range of different applications, from high power switching to low power applications. Its features make it suitable for use in applications where high efficiency, reliability and fast switching performance are required.
The specific data is subject to PDF, and the above content is for reference
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