IRF7204TRPBF Allicdata Electronics
Allicdata Part #:

IRF7204PBFTR-ND

Manufacturer Part#:

IRF7204TRPBF

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 5.3A 8-SOIC
More Detail: P-Channel 20V 5.3A (Ta) 2.5W (Tc) Surface Mount 8-...
DataSheet: IRF7204TRPBF datasheetIRF7204TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF7204TRPBF is based on the famous power MOSFET technology created by International Rectifier. This specific MOSFET is an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is referred to as a single, because it has one drain, one source and one gate. It has been designed specifically for use in power electronic circuits and can be used in both AC and DC applications. The IRF7204TRPBF has very low on-state resistance (Rds(on) = 1.7mOhm at Vgs = 10V) and low turn-on gate threshold voltage (Vgs(th) = 3V).

The IRF7204TRPBF is an ideal choice for many different applications. It is widely used in DC-DC converters and other DC power supplies, motor drives, inverters, automatic control systems, and lighting systems. It is also widely used in AC-DC power conversions, Class D audio amplifiers, and electroplating power supplies. The low Rds(on), low capacitance, and low gate charge make the device ideal for switching power applications.

The IRF7204TRPBF has a working principle that is similar to that of other MOSFETs. It consists of a gate terminal, a source terminal and a drain terminal. When the gate voltage is decreased, a transistor effect occurs, allowing a current to flow from the drain to the source. The current flowing through the source to the drain is controlled by the gate-source voltage (Vgs). When Vgs is positive, current flows in the reverse direction and the flow is called “reverse gate threshold voltage” (Vrgt). When the gate voltage is negative, then the flow is called “normal gate threshold voltage” (Vngt).

The IRF7204TRPBF is a versatile and reliable power electronic device and is highly recommended for use in a wide range of applications. The low Rds(on), low gate charge, and low capacitance make the device a great choice for switching power applications. It is also suitable for DC-DC converters and other DC power supplies, motor drives, inverters, automatic control systems, and lighting systems.

The IRF7204TRPBF has a wide range of operating temperature, from -55°C to +150°C and can handle high power dissipation. This device also has an extremely fast switching speed, making it ideal for applications that require high switching frequency. The device also has an increased level of immunity to voltage transients, making it an excellent choice for applications that are subjected to frequent transients.

In conclusion, the IRF7204TRPBF is a versatile and reliable MOSFET that is suitable for a wide range of applications. Its low Rds(on) and low capacitance make it an ideal choice for use in switch power applications. Its wide temperature range, high power dissipation, fast switching speed, and level of immunity to voltage transients make it an excellent choice for applications that require these characteristics.

The specific data is subject to PDF, and the above content is for reference

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