IPB60R099C6ATMA1

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The IPB60R099C6ATMA1 is a single-package, N-Channel, enhancement-mode vertical D-MOS transistor that is designed for a wide range of applications. It is manufactured using advanced TrenchMOS® technology for both high and low gate drive requirements. It has a breakdown voltage rating of up to 99 V and is capable of delivering up to 6 A of continuous drain current.

The IPB60R099C6ATMA1 transistor is ideal for a variety of applications including motor drives, resistance welding, high-speed switching, solenoid valve controls, and DC-DC converters. It is also suitable for consumer and home appliance applications such as switch mode power supplies, electric motors, and lighting systems.

The IPB60R099C6ATMA1 is a surface-mount device and is offered in a standard TO-220 package. It features a wide gate voltage range of 0V to 99V, low on-resistance of 5 mΩ, high dV/dt of 2000V/μs, and no power derating below 125°C. This device has excellent switching characteristics and improved immunity to noise due to its low parasitic capacitance.

The working principle of the IPB60R099C6ATMA1 transistor is based on the principle of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). A MOSFET is an active three terminal semiconductor device that consists of a source, a drain, and a gate. When a positive voltage is applied to the gate, an electric field is created that attracts electrons from the substrate to the source and drain terminals, thus forming a conducting channel. This allows current to flow from the source to the drain, and the device functions as an electric switch.

When the IPB60R099C6ATMA1 is used as a switch, it can be rapidly switched on and off in a fraction of a second, allowing for high-speed switching at low power consumption. The device is also able to operate at a wide range of operating voltages, making it ideal for a variety of applications. It is capable of controlling large currents with very low gates drive, making it efficient and reliable in power applications.

Since it has a low on-resistance of 5 mΩ, the IPB60R099C6ATMA1 transistor is able to reduce power losses, improve efficiency, and reduce dissipation in power devices. Additionally, it has high EMC immunity with no power derating below 125°C, allowing it to be used in temperature-sensitive applications. Due to its high surge handling capabilities, it can also be used in circuits that require high transient currents.

In conclusion, the IPB60R099C6ATMA1 is a single-package, N-Channel, enhancement-mode vertical D-MOS transistor that is designed for a wide range of applications. It is equipped with a wide gate voltage range, high dV/dt, and low on-resistance rating and is capable of delivering up to 6A of continuous drain current. It has excellent switching characteristics and improved immunity to noise due to its low parasitic capacitance, making it an ideal choice for high-speed switching and power applications.

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