BSZ035N03LSGATMA1

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The BSZ035N03LSGATMA1 is a single-channel N-channel MOSFET transistor that represents part of the wide range available from Infineon Technologies. It is a power MOSFET transistor used primarily in switching applications and can handle 35A of drain current at 25oC. Unlike other transistors in this category, it utilizes a Low Gate Charge (a measure of the amount of input charge used to turn the transistor on or off) and ultra-low RDS(on) (a measure of the resistance of the MOSFET when the gate voltage is turned on) for fast switching performance.

In terms of its application field, the BSZ035N03LSGATMA1 is used mainly in switching applications and is ideal for applications such as motor control, switching power supplies and control circuits. Because the transistor is an N-type MOSFET, it is a suitable component for logic-level switching and for driving loads of high direct current (DC) or high alternating current (AC). It also has a low figure of merit (Qrr), which is of particular use in high-frequency switching applications. The low gate charge requirements also make the transistor suitable for use as a switching device in applications that require short pulses of hundreds of microseconds.

The BSZ035N03LSGATMA1 is also suitable for more demanding applications such as those requiring low gate losses and high switch-on speed. High switching frequencies, low switching losses and small board space requirements are all additional features of the component. In addition, the transistor is compatible with fast-switching AC/DC converters, making it especially useful in applications such as fluorescent lighting and motor speed controllers.

In terms of its working principle, the BSZ035N03LSGATMA1 has an internal P-channel MOSFET that turns the transistor on or off by controlling the gate voltage. When the gate voltage is negative, the P-channel MOSFET is turned off, thus preventing current flow. When the gate voltage is positive, the P-channel MOSFET is turned on, enabling current to flow. This action is described as “reverse-blocking” since current can not flow from the drain to the source when the gate voltage is negative. In addition, the P-channel MOSFET has an on-resistance of less than 1 ohm, making it suitable for high-frequency switching. This on-resistance, combined with a low gate charge, makes the BSZ035N03LSGATMA1 particularly useful for switching applications that require high-frequency pulses.

This single-channel N-channel MOSFET transistor has a variety of uses and can be deployed in numerous applications. It is ideal for motor control, switching power supplies, control circuits, and fast-switching AC/DC converters, as well as a host of other high-frequency switching applications. Its ability to provide low gate charge and high switching speed, combined with its reliability for reverse-blocking and low on-resistance, make it a desirable component for many different circuits.

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