Open drain logic receiver - Allicdata Electronics

Related Categories

< 6 7 8 9 10 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
62-0095PBF-ND	62-0095PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power Dissipation (Max): 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	1+: $0
NTMSD2P102R2SG- ND	NTMSD2P102R2SG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
APL602J-ND	APL602J	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Rds On (Max) @ Id, Vgs: 125 mOhm @ 21.5A, 12V Vgs(th) (Max) @ Id: 4V @ 2.5mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Power Dissipation (Max): 565W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP Package / Case: SOT-227-4, miniBLOC	1000 Order	--
IRLR7833CTRRPBF -ND	IRLR7833CTRRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 140A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Power Dissipation (Max): 140W (Tc) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
1242-1187-ND	GA10JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A Power Dissipation (Max): 170W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
2N7236U-ND	2N7236U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	1000 Order	1+: $0
IPC302N25N3AX1S A1-ND	IPC302N25N3AX1S A1	Infineon Technologies	View more Series: OptiMOS Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	1000 Order	4425+: $2.6029
IRF7809PBF-ND	IRF7809PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 12V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
TK16A55D(STA4QM )-ND	TK16A55D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
1242-1188-ND	GA20JT12-247	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A Power Dissipation (Max): 282W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	1000 Order	1+: $0
IPU60R1K5CEAKMA 1-ND	IPU60R1K5CEAKMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1500+: $0.1776
NDT451NTR-ND	NDT451N	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	--
2SJ053600LTR-ND	2SJ053600L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 75 Ohm @ 10mA, 5V Vgs(th) (Max) @ Id: 2V @ 1A Vgs (Max): 20V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-G1 Package / Case: SC-70, SOT-323	1000 Order	1+: $0
NTMSD2P102R2-ND	NTMSD2P102R2	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V FET Feature: Schottky Diode (Isolated) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
497-17080-ND	STF7N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	200 Order	1+: $2.0601 50+: $1.6627 100+: $1.4964 500+: $1.1639 1000+: $0.9644
BSC882N03LSGATM A1TR-ND	BSC882N03LSGATM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	5000 Order	5000+: $0.2434
497-17081-ND	STW7N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	84 Order	--
UPA2813T1L-E1-A T-ND	UPA2813T1L-E1-A T	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V Power Dissipation (Max): 1.5W (Ta), 52W (Tc) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
IPC020N10L3X1SA 1-ND	IPC020N10L3X1SA 1	Infineon Technologies	View more Series: OptiMOS Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 12A Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	1000 Order	69830+: $0.171
R5019ANJTLTR-ND	R5019ANJTL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 19A (Ta) Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $2.1808
XP161A1355PR-G- ND	XP161A1355PR-G	Torex Semiconductor Ltd	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Power Dissipation (Max): 2W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	1000 Order	--
APT25SM120B-ND	APT25SM120B	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
RQ6E030ATTCRTR- ND	RQ6E030ATTCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 91 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-74, SOT-457	3000 Order	3000+: $0.1134
1242-1148-ND	2N7637-GA	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) (165C) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
APT80SM120B-ND	APT80SM120B	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V Vgs (Max): +25V, -10V Power Dissipation (Max): 555W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
917-1133-2-ND	EPC2022	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	4500 Order	500+: $3.4588
APL502LG-ND	APL502LG	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V Vgs(th) (Max) @ Id: 4V @ 2.5mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Power Dissipation (Max): 730W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	130 Order	--
SI8475EDB-T1-E1 TR-ND	SI8475EDB-T1-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Vgs (Max): 12V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	1000 Order	3000+: $0.1907
BSS110-ND	BSS110	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	1+: $0
IRLR7833CPBF-ND	IRLR7833CPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 140A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Power Dissipation (Max): 140W (Tc) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
PH7030AL,115-ND	PH7030AL,115	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 12V Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1+: $0
AUIRFSL4310-ND	AUIRFSL4310	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
2SK1835-E-ND	2SK1835-E	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 15V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Power Dissipation (Max): 125W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	--
568-9731-5-ND	BUK9520-55A,127	NXP USA Inc	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Power Dissipation (Max): 118W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
568-9732-5-ND	BUK9520-100A,12 7	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6385pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
2N6790U-ND	2N6790U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
IRF3610STRLPBFT R-ND	IRF3610STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 103A (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
568-9802-5-ND	BUK7535-55A,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
BTS110E3045ANTM A1TR-ND	BTS110E3045ANTM A1	Infineon Technologies	View more Series: TEMPFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SMP3003-DL-E-ND	SMP3003-DL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V Power Dissipation (Max): 90W (Tc) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0

< 6 7 8 9 10 >

Hot Searches: open drain logic receiver open-drain logic buffer open drain logic drive open drain logic transceiver open logic receiver open drain logic converter open drain shift register open drain level shifter open logic buffer open logical drive open logic transceiver logic receiver open drain analog comparator open-drain comparator open drain cmos comparator open drain expander open drain touch sensor open drain capacitive sensor open drain interface ic open drain operational amplifier

Search Result:open drain logic receiver

Related Categories