| Allicdata Part #: | 2SK1835-E-ND |
| Manufacturer Part#: |
2SK1835-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 1500V 4A TO-3P |
| More Detail: | N-Channel 1500V 4A (Ta) 125W (Tc) Through Hole TO-... |
| DataSheet: |  2SK1835-E Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 10V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7 Ohm @ 2A, 15V |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drain to Source Voltage (Vdss): | 1500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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2SK1835-E is a N-Channel Enhancement Mode Field Effect Transistor(FETs) fabricated to operate at high power terminal. It is commonly used in power supply applications, particularly in audio power amplifier and DC/DC converter circuits. The working principle of 2SK1835-E is similar to other FETs, where a small voltage can control a large current allowing it to act as a switch. In this article, we will discuss the application field and working principle of 2SK1835-E.Application Field of 2SK1835-E
2SK1835-E is a highly power efficient, N-channel enhancement mode field effect transistor (FETs) used in various electronic circuits. It is suitable for intermittent or continuous duty applications like DC/DC converter, audio power amplifier and other high-power circuits. It is the perfect choice for high current and high voltage applications. 2SK1835-E is designed to operate at high voltages and at high switching frequencies, making it very attractive for use in high power applications like DC/DC power converters, motors, and high power audio amplifiers. Due to its low gate charge, low gate input capacitance and low internal power dissipation, 2SK1835-E is well suited for high-power switching and power control applications. The device is capable of handling very high power levels, up to 350 watts. This makes it ideal for applications such as audio power amplifiers and DC/DC converter circuits.
Working Principle of 2SK1835-E
2SK1835-E is a type of field effect transistor (FETs) that works on the principle of controlling current by applying a low voltage. Compared to other transistors such as BJTs (Bipolar Junction Transistors), FETs are more efficient and consume less power when used. 2SK1835-E contains a gate (G), source (S) and a drain (D) terminals.When a positive voltage is applied to the Gate terminal, the FET is “ON” and it allows current to flow from the source to the drain. On the other hand, when a negative voltage is applied, the current stops flowing and the FET is “OFF”. FETs are very useful in switching and power control applications, as they can be switched “ON” and “OFF” very rapidly.2SK1835-E contains an N-channel, where a N-type semiconductor material is used as the channel material. The device is used as a switch, allowing current to flow when the Gate voltage is sufficiently positive. When the voltage applied to the Gate terminal is increased, the voltage drop across the Drain and Source increases. This allows more current to flow.2SK1835-E is also designed to operate at very high voltage levels and at high switching frequencies. This makes it very suitable for use in power control applications such as DC/DC Power Converters and motor control applications. The device can handle very high power levels up to 350 watts, making it an ideal choice for power amplifiers and other high-power electronic circuit applications.
In conclusion, 2SK1835-E is a versatile N-channel enhancement mode field effect transistor (FETs) and is widely used in various electronic circuit applications. Its low gate charge, low gate input capacitance and low internal power dissipation makes it very suited for high-power switching and power control applications. It is capable of handling high power levels up to 350 watts and is an ideal choice for audio power amplifiers and DC/DC converter circuits.
The specific data is subject to PDF, and the above content is for reference
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