BUK9520-55A,127

Series:	TrenchMOS™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55V
Current - Continuous Drain (Id) @ 25°C:	54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	18 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	2210pF @ 25V
FET Feature:	--
Power Dissipation (Max):	118W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK9520-55A,127 is a power MOSFET transistor in the single package configuration with a maximum drain source voltage of 55V, a maximum gate source voltage of 20V, and a drain current of 64A. It is used in motor control and power switching applications in the automotive, computer, and consumer markets.The BUK9520-55A,127 is a state-of-the-art MOSFET with outstanding performance. It is built on the STMicroelectronics STripFET technology, which is a patented field-effect transistor (FET) structure that offers improved performance, higher switching frequency, and lower on-resistance.The BUK9520-55A,127 is used in circuits that require high-efficiency switching and high-power management. Its features include low on-resistance (RDS(on)) at 10Ω typically and a maximum of 20Ω, fast switching with a maximum frequency of 4MHz, and low gate charge. Additionally, the BUK9520-55A,127 is designed to protect against any over-voltage and latch-up condition and will remain in the off state when its current exceeds the safe operating area (SOA).The working principle behind the BUK9520-55A,127 is based on the MOSFET concept, which is based on the electrostatic control of the current. The MOSFET structure consists of two conducting channels (source and drain) of N-type and P-type material separated by a thin barrier of insulation (the gate oxide). A voltage is applied to the gate terminal, which creates an electrostatic field that depletes the charge carriers (electrons and holes) of the N-type and P-type material. This depletion of charge carriers modulates the conductivity of the two channels and the current flowing through the two channels changes accordingly, allowing the switching of the device on or off.The BUK9520-55A,127 is widely used in various motor control and power switching applications. It is used in applications such as load handling relays, motor control, HVAC systems, power supplies, lights, appliances, automotive, home theatre amplifiers, data converters, and industrial applications.The BUK9520-55A,127 has become very popular in the motor control and power switching applications due to its superior performance. Its ultra-low on-resistance and gate charge, combined with its fast switching rate, allow the device to provide a very good efficiency and robust operation in these types of applications.The BUK9520-55A,127 is a state-of-the-art MOSFET that offers superior performance and reliability for motor control and power switching applications. It is a highly efficient device with a low on-resistance (RDS(on)) and a fast switching capability, and is designed to protect against any over-voltage and latch-up conditions. Its features make it ideal for use in a variety of applications, including load handling relays, HVAC systems, power supplies, lights, appliances, automotive, home theatre amplifiers, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description