Allicdata Part #: | 2N6790U-ND |
Manufacturer Part#: |
2N6790U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 18LCC |
More Detail: | N-Channel 200V 2.8A (Tc) 800mW (Tc) Surface Mount ... |
DataSheet: | 2N6790U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 18-CLCC |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N6790U is a robust power field effect transistor, or FET, designed to provide reliable power performance in applications such as voltage regulators and motor controls. Developed by Microsemi Corporation, this MOSFET is a single-gate device constructed with a silicon substrate, making it far more durable than other transistor types. With a continuous drain current (ID) of 200mA, drain source breakdown voltage (BVDSS) up to 100V, and gate-source voltage (VGS) exceeding a level of 20V, this device is capable of handling a wide range of applications.
Application Field
The application field of the 2N6790U is diverse and encompasses a wide range of electronics, power management, and motor control systems. However, this FET is most frequently utilized for voltage regulator systems. During operation, the device acts as a switch to allow power to flow when activated and cease once the current or voltage reaches a desired level. This makes it an ideal choice for voltage regulators requiring a high degree of accuracy. Additionally, this device is also capable of handling unusual conditions such as high-frequency switchmode operations.
Working Principle
At the heart of the 2N6790U is its MOSFET construction which utilizes the movements of electrons and holes within an insulated silicon nitride gate to control the device\'s drain current (ID). During operation, the gate of the device is initially charged before the flow of current through the MOSFET is enabled. To do this, the gate-source voltage, or VGS, must exceed a certain value, typically in the range of 5 to 20V depending on the application. The resulting pulsed current, or voltage, is then fed into the drain, allowing current to flow. By changing the VGS and magnitude of the pulsed current or voltage, the MOSFET can be used to control the device\'s output.
Conclusion
Overall, the 2N6790U is a reliable and versatile FET designed to handle a wide range of tasks. Its robust MOSFET construction and ability to accommodate unusual conditions such as high-frequency switchmode operations make it an ideal choice for powering motor control systems, voltage regulator systems, and other electronic devices. As a result, this device is paramount in providing reliable and efficient power control to a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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