UPA2813T1L-E1-AT

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The UPA2813T1L-E1-AT FET is a high-side asymmetric MOSFET with a max continuous drain current of up to 150A, a typical drain-source on-resistance of 7.2mohm and a maximum repetitive avalanche energy capability of 2.5mJ. This highly effective FET can provide superior thermal performance and long-term stability.

The UPA2813T1L-E1-AT can be used in a wide range of applications, such as low-power switching, motor control, and power management in consumer electronics, automotive, and other applications. In particular, this FET excels at high-current switching, providing superior reliability and performance for electronic projects.

The UPA2813T1L-E1-AT uses a MOSFET (metal-oxide semiconductor field-effect transistor) design. This type of FET consists of three terminal connections—a source, gate, and drain—that are arranged around the perimeter of a semiconductor device. The gate can be connected to either a positive or negative voltage source, creating different areas of conductivity that can be used to control the flow of current.

When the gate is connected to a positive voltage, the MOSFET becomes an “N-channel” device, as electrons in the channel are attracted towards the positive voltage, causing the channel to become overpopulated. This makes it easier for electrons to flow through the channel and out to the drain. Alternatively, if the gate is connected to a negative voltage, the channel becomes “P-type,” as holes in the channel are attracted towards the negative voltage, causing the channel to become underpopulated. This makes it harder for electrons to flow through the channel and reduces the current.

The UPA2813T1L-E1-AT is designed with a high current capability and a low on-resistance, giving it superior performance and reliability. Its low on-resistance allows for higher power efficiency, leading to improved battery life and lower power consumption. Additionally, the high current capabilities and low drain-source voltage (VDS) allow for higher switching speeds, allowing for improved performance in high-speed circuits.

The UPA2813T1L-E1-AT is also designed to withstand a large number of repetitive pulses without failing. This is accomplished through a combination of its high maximum repetitive avalanche energy capability and its superior thermal performance. The superior thermal performance allows the FET to dissipate heat quickly and efficiently, while the high avalanche energy capability allows it to be subjected to high voltage pulses without breaking down. Together, these two features allow the UPA2813T1L-E1-AT to handle large amounts of current and withstand high voltages, making it the perfect choice for applications that require reliable operation.

Overall, the UPA2813T1L-E1-AT is a high-quality and highly reliable FET. Its combination of features and its ability to handle high currents and pulse voltages make it an ideal choice for a range of applications, from low-power switching to motor control to power management. With its superior performance, its reliable operation, and its long-term stability, the UPA2813T1L-E1-AT is a great choice for any application that requires reliable operation.

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