Allicdata Part #: | TK10A60WS4VX-ND |
Manufacturer Part#: |
TK10A60W,S4VX |
Price: | $ 2.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 9.7A TO-220SIS |
More Detail: | N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-... |
DataSheet: | TK10A60W,S4VX Datasheet/PDF |
Quantity: | 11 |
1 +: | $ 2.02860 |
Vgs(th) (Max) @ Id: | 3.7V @ 500µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 4.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK10A60W and S4VX are field that are included in transistors – FETs, MOSFETs – Single. Basically, the TK10A60W and S4VX are high voltage metal oxide semiconductor field effect transistor (MOSFET) devices which are used in various applications. Each device has its own specific features which makes them suitable for different types of usage.
The TK10A60W is a 600V, 10A N-Channel Enhancement Mode Rectified MOSFET. It is a three-pin device featuring a power source, a drain and a gate. The TK10A60W has a low gate drive voltage, low output capacitance, low waste heat and low switching loss. This MOSFET is suitable for applications that require high voltage at a given current. It is also suitable for controlling a high current load with a logic signal, for example, electronic speed control, dc-dc converters, and audio amplifiers.
The S4VX is a Surface Mount Super Junction MOSFET. It is a four-pin device that also includes a body-drain pin besides the power source, drain, and gate. It is a low voltage, low power MOSFET that is suitable for circuit applications such as bridge rectifiers, H-bridges, DC-DC converters, and motor control. The S4VX has higher power and efficiency compared to the TK10A60W. It also has a low Ron, low gate charge, and high current carrying capacity.
Overall, the working principles of the TK10A60W and S4VX are quite similar. In both the devices, the MOSFET basically works in the following way. When the gate voltage is applied, an electric field is created at the gate which attracts carriers from the source and drain electrode. These carriers form a conducting channel which allows current to flow from the source to the drain. The application of the gate voltage alters the width of the conducting channel, as well as the drain-source voltage. This allows the TK10A60W and S4VX MOSFETs to be used as important control elements in various electrical circuits.
In conclusion, the TK10A60W and S4VX are high voltage and low voltage MOSFETs. Both are suitable for different applications. The TK10A60W is a high voltage, high current MOSFET which is suitable for controlling a high current load with a low voltage logic signal. The S4VX is a low voltage, low power MOSFET which is suitable for applications such as bridge rectifiers, H-bridges, DC-DC converters, and motor control. Both MOSFETs work in a similar fashion. They both rely on a gate voltage to create an electric field which attracts carriers from the source and drain electrodes, forming a conducting channel which allows current to flow from the source to the drain. This allows the TK10A60W and S4VX MOSFETs to be used as important control elements in various electrical circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TK100L60W,VQ | Toshiba Semi... | 24.86 $ | 44 | MOSFET N CH 600V 100A TO3... |
TK10A60E,S4X | Toshiba Semi... | 1.3 $ | 142 | MOSFET N-CH 600V TO220SIS... |
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TK10A80E,S4X | Toshiba Semi... | 1.93 $ | 13 | MOSFET N-CH 800V TO220SIS... |
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TK10P60W,RVQ | Toshiba Semi... | 0.96 $ | 1000 | MOSFET N CH 600V 9.7A DPA... |
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TK10A50D(STA4,Q,M) | Toshiba Semi... | 1.23 $ | 1000 | MOSFET N-CH 500V 10A TO-2... |
TK10A60W,S4X | Toshiba Semi... | 1.25 $ | 1000 | MOSFET N CH 600V 9.7A TO-... |
TK10V60W,LVQ | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.7A 5DF... |
TK10A55D(STA4,Q,M) | Toshiba Semi... | 1.5 $ | 1000 | MOSFET N-CH 550V 10A TO-2... |
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TK10A60W,S4VX | Toshiba Semi... | 2.25 $ | 11 | MOSFET N-CH 600V 9.7A TO-... |
TK10Q60W,S1VQ | Toshiba Semi... | 2.44 $ | 10 | MOSFET N-CH 600V 9.7A IPA... |
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