RN2908FE(TE85L,F) Allicdata Electronics

RN2908FE(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN2908FE(TE85LF)TR-ND

Manufacturer Part#:

RN2908FE(TE85L,F)

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2908FE(TE85L,F) datasheetRN2908FE(TE85L,F) Datasheet/PDF
Quantity: 4000
4000 +: $ 0.04101
Stock 4000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN2908FE(TE85L,F) is an array of transistors categorized as Benjimen Junctions, Bipolar (BJT). It is pre-biased, which offers many advantages in a variety of applications.

As with other BJT transistors, each array consists of three layers. A p-type layer, which has the majority of the carriers and can be referred to as the middle layer, is sandwiched between two n-type layers. In BJT transistors, the p-layer is known as the base and the two n-layers are the emitter and collector.

In an RN2908FE(TE85L,F) array, each of the transistors is pre-biased. This means that a small amount of current has already been supplied to each base in order to give the transistor a slight amount of forward bias. This helps minimize the amount of current needed to turn the transistor on, making it much more efficient for many applications.

One of the main advantages of a pre-biased array is that it simplifies the process of driving it. Since a small amount of current is already present, much less is needed to turn the transistor on, thus reducing complexity in the circuit. It also helps reduce the amount of power needed to drive the transistors, making them much more efficient.

The RN2908FE(TE85L,F) is mainly used in applications such as analog circuits, audio and video equipment, and digital logic circuits. Its pre-biased transistor arrays allow for much higher speed and power efficiency, making it ideal for these types of applications.

The RN2908FE(TE85L,F) is also extremely versatile, as it can be integrated into a wide range of circuits and applications. The transistors can be used as switches, amplifiers, oscillators, and other various applications. Furthermore, its pre-biased arrays can be used to reduce the complexity of the circuit, as well as to increase the overall efficiency of the system.

In conclusion, the RN2908FE(TE85L,F) is an array of pre-biased transistors categorized as Bipolar (BJT). It has a number of advantages, such as increased speed and power efficiency, simplifying the driving process, and providing versatility in a wide range of applications. It is mainly used in analog circuits, audio and video equipment, digital logic circuits, and other various applications.

The specific data is subject to PDF, and the above content is for reference

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