RN2908FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2908FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2908FE(TE85L,F) |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2908FE(TE85L,F) Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.04101 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2908FE(TE85L,F) is an array of transistors categorized as Benjimen Junctions, Bipolar (BJT). It is pre-biased, which offers many advantages in a variety of applications.
As with other BJT transistors, each array consists of three layers. A p-type layer, which has the majority of the carriers and can be referred to as the middle layer, is sandwiched between two n-type layers. In BJT transistors, the p-layer is known as the base and the two n-layers are the emitter and collector.
In an RN2908FE(TE85L,F) array, each of the transistors is pre-biased. This means that a small amount of current has already been supplied to each base in order to give the transistor a slight amount of forward bias. This helps minimize the amount of current needed to turn the transistor on, making it much more efficient for many applications.
One of the main advantages of a pre-biased array is that it simplifies the process of driving it. Since a small amount of current is already present, much less is needed to turn the transistor on, thus reducing complexity in the circuit. It also helps reduce the amount of power needed to drive the transistors, making them much more efficient.
The RN2908FE(TE85L,F) is mainly used in applications such as analog circuits, audio and video equipment, and digital logic circuits. Its pre-biased transistor arrays allow for much higher speed and power efficiency, making it ideal for these types of applications.
The RN2908FE(TE85L,F) is also extremely versatile, as it can be integrated into a wide range of circuits and applications. The transistors can be used as switches, amplifiers, oscillators, and other various applications. Furthermore, its pre-biased arrays can be used to reduce the complexity of the circuit, as well as to increase the overall efficiency of the system.
In conclusion, the RN2908FE(TE85L,F) is an array of pre-biased transistors categorized as Bipolar (BJT). It has a number of advantages, such as increased speed and power efficiency, simplifying the driving process, and providing versatility in a wide range of applications. It is mainly used in analog circuits, audio and video equipment, digital logic circuits, and other various applications.
The specific data is subject to PDF, and the above content is for reference
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RN2905T5LFT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2906FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2911FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2901FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2963(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2962(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2964(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W U... |
RN2961(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2905FE,LF(CB | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2902FE,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W E... |
RN2903,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2904,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2902FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2904FE(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2961FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2962FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2963FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2964FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2965FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2966FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2967FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2968FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2969FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2970FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2971FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2901(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2902(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
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