RN2909FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2909FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2909FE(TE85L,F) |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2909FE(TE85L,F) Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.04101 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2909FE(TE85L,F) is a pre-biased array transistor consisting of four individually packaged NPN bipolar junction transistors. It is the first three-terminal transistor array that is provided in a SOT-23 package with pre-biased emitters and bases. This pre-bias technology simplifies the design and implementation of this transistor array in a wide variety of applications.
The RN2909FE(TE85L,F) is a versatile transistor array that can be used for a variety of applications. It offers excellent thermal performance and stability, making it suitable for use in automotive, industrial, and consumer electronics. It is suitable for use in a variety of design applications such as MOSFET driver circuits, switching regulators, power amplifiers, current sources, and dynamic clamping.
The RN2909FE(TE85L,F) offers three major advantages. First is its wide operating temperature range. It can operate from -40°C up to +125°C; this allows for reliable operation in extreme environments. Second, the pre-biased emitters and bases allow for easy design of circuits that require minimal components and short time-to-market. Finally, the package of this array includes an integrated Thermal Shutoff (TSO) feature, which provides over-temperature protection.
The working principle of the RN2909FE(TE85L,F) is quite simple. This transistor array consists of four independently controlled NPN transistors. Each of these transistors has its own base, collector and emitter. When a voltage is applied between the base and the emitter, it creates a current flow through the collector. This current flow can be used to switch and regulate signals from an external source, such as an audio signal.
The RN2909FE(TE85L,F) array is an ideal choice for use in a wide range of electronic applications. Its is reliable, thermally stable, and provides high performance in a variety of operating environments. By exploiting the excellent characteristics of the individual transistors, the array can be used to switch and regulate signals with improved efficiency. It also has the ability to provide over-temperature protection, which makes it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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RN2965(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
RN2963(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
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RN2903,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
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