RN2909FE(TE85L,F) Allicdata Electronics

RN2909FE(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN2909FE(TE85LF)TR-ND

Manufacturer Part#:

RN2909FE(TE85L,F)

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2909FE(TE85L,F) datasheetRN2909FE(TE85L,F) Datasheet/PDF
Quantity: 4000
4000 +: $ 0.04101
Stock 4000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN2909FE(TE85L,F) is a pre-biased array transistor consisting of four individually packaged NPN bipolar junction transistors. It is the first three-terminal transistor array that is provided in a SOT-23 package with pre-biased emitters and bases. This pre-bias technology simplifies the design and implementation of this transistor array in a wide variety of applications.

The RN2909FE(TE85L,F) is a versatile transistor array that can be used for a variety of applications. It offers excellent thermal performance and stability, making it suitable for use in automotive, industrial, and consumer electronics. It is suitable for use in a variety of design applications such as MOSFET driver circuits, switching regulators, power amplifiers, current sources, and dynamic clamping.

The RN2909FE(TE85L,F) offers three major advantages. First is its wide operating temperature range. It can operate from -40°C up to +125°C; this allows for reliable operation in extreme environments. Second, the pre-biased emitters and bases allow for easy design of circuits that require minimal components and short time-to-market. Finally, the package of this array includes an integrated Thermal Shutoff (TSO) feature, which provides over-temperature protection.

The working principle of the RN2909FE(TE85L,F) is quite simple. This transistor array consists of four independently controlled NPN transistors. Each of these transistors has its own base, collector and emitter. When a voltage is applied between the base and the emitter, it creates a current flow through the collector. This current flow can be used to switch and regulate signals from an external source, such as an audio signal.

The RN2909FE(TE85L,F) array is an ideal choice for use in a wide range of electronic applications. Its is reliable, thermally stable, and provides high performance in a variety of operating environments. By exploiting the excellent characteristics of the individual transistors, the array can be used to switch and regulate signals with improved efficiency. It also has the ability to provide over-temperature protection, which makes it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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