RN1969FE(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1969FE(TE85LF)TR-ND

Manufacturer Part#:

RN1969FE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1969FE(TE85L,F) datasheetRN1969FE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN1969FE (TE85L,F) is a pre-biased array of transistors capable of delivering greater power and capability than other components, often found in electrical systems. The component is a bipolar junction transistor (BJT) array, which allows higher currents with a higher voltage range, than many other transistors. In addition, with its high input and output resistance, the RN1969FE transistor set is able to operate efficiently even at low voltages and currents.

The RN1969FE has two main components. The first is a diode array, which acts as the main component for pre-biasing. The diode array isolates the package from external voltages and currents, providing protection against over-voltage and other common conditions that can cause damage to a component. The second component is the actual transistor, which consists of two individual bipolar junction transistor devices. This is typically referred to as the “main” transistors, as they provide the actual power to the component.

The main application field of the RN1969FE is the use of the component to create an active load. An active load device is an electrical circuit component which is able to convert energy, usually in the form of electrical energy, into some other form of energy, such as light, heat, or motion. This is accomplished by using a pair of transistors, or an array of transistors, to provide amplification and control of the energy being converted. The pre-biased array of the RN1969FE provides a stable and reliable active load device, which reduces the amount of electric current that is needed for a given application.

The performance of the RN1969FE is also enhanced by its working principle. This principle is based on using high values of current and voltage to create higher output current efficiently. The voltages which are applied to the component typically range from 0.3 volts to 32 volts. This wide voltage range allows for a high level of versatility and makes the RN1969FE ideal for a number of different applications. In addition, the component is also able to work in many different configurations, such as in a single supply, dual supply, and three-level configuration, which provides greater control and flexibility.

Overall, the RN1969FE is an ideal component for many electrical applications, providing greater power while being convenient and efficient. With its high input and output resistance, the component is able to operate efficiently even at low voltages. In addition, its wide voltage range makes it suitable for a variety of different applications, while its pre-biased diode array provides an added safeguard against damage. Finally, its working principle allows it to deliver higher power and capabilities with the same amount of current and voltage, making it an ideal component for many applications.

The specific data is subject to PDF, and the above content is for reference

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