Toshiba shift register - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TC58BVG1S3HTAI0 -ND	TC58BVG1S3HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG1S3HBAI6 -ND	TC58NVG1S3HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
THGAF8T1T83BAIR -ND	THGAF8T1T83BAIR	Toshiba Memory America, Inc.	View more Series: Consumer UFS Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: UFS Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	25 Order	1+: $128.652
TC58BYG1S3HBAI6 -ND	TC58BYG1S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	1+: $2.4885 10+: $2.2554 25+: $2.2065 50+: $2.1943 100+: $1.9678 250+: $1.9605 500+: $1.8883 1000+: $1.7953
TC58BVG0S3HBAI4 -ND	TC58BVG0S3HBAI4	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	41 Order	--
TC58NVG2S0HTAI0 -ND	TC58NVG2S0HTAI0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG0S3HTA00 -ND	TC58NVG0S3HTA00	Toshiba Memory America, Inc.	View more Series: TC58NVG0 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I Base Part Number: TC58NVG0	25510 Order	--
THGBMHG6C1LBAIL -ND	THGBMHG6C1LBAIL	Toshiba Memory America, Inc.	View more Series: eMMC Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Clock Frequency: 52MHz Memory Interface: MMC Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	1000 Order	--
TC58NVG1S3HTAI0 -ND	TC58NVG1S3HTAI0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
THGAF8G9T43BAIR -ND	THGAF8G9T43BAIR	Toshiba Memory America, Inc.	View more Series: Consumer UFS Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: UFS Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	39 Order	--
TC58BVG2S0HTA00 -ND	TC58BVG2S0HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NYG2S0HBAI6 -ND	TC58NYG2S0HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	11 Order	--
TC58NVG2S0FTA00 -ND	TC58NVG2S0FTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG0S3HTA00 -ND	TC58BVG0S3HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG2S0HBAI4 -ND	TC58BVG2S0HBAI4	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	1000 Order	--
TC58BYG0S3HBAI6 -ND	TC58BYG0S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TC58NVG0S3HBAI6 -ND	TC58NVG0S3HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TH58BYG2S3HBAI6 -ND	TH58BYG2S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	96 Order	1+: $3.8808 10+: $3.5425 25+: $3.4748 50+: $3.451
TH58NYG3S0HBAI6 -ND	TH58NYG3S0HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	338+: $4.6221
TH58NVG3S0HTA00 -ND	TH58NVG3S0HTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG2S0HBAI6 -ND	TC58NVG2S0HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	37 Order	--
TC58NVG0S3HBAI4 -ND	TC58NVG0S3HBAI4	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	1000 Order	--
TH58NVG5S0FTA20 -ND	TH58NVG5S0FTA20	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 32Gb (4G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG2S0HBAI4 -ND	TC58NVG2S0HBAI4	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	7459 Order	--
TC58NVG1S3ETAI0 -ND	TC58NVG1S3ETAI0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TH58NVG3S0HTAI0 -ND	TH58NVG3S0HTAI0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG1S3HBAI6 -ND	TC58BVG1S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
THGBMHG6C1LBAWL -ND	THGBMHG6C1LBAWL	Toshiba Memory America, Inc.	View more Series: eMMC Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Clock Frequency: 52MHz Memory Interface: MMC Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	1000 Order	--
TH58NVG2S3HTA00 -ND	TH58NVG2S3HTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	71 Order	--
TC58BYG2S0HBAI6 -ND	TC58BYG2S0HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	191 Order	1+: $3.2319 10+: $2.9522 25+: $2.8957 50+: $2.8758 100+: $2.5799
THGBMHG9C4LBAIR -ND	THGBMHG9C4LBAIR	Toshiba Memory America, Inc.	View more Series: eMMC Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Clock Frequency: 52MHz Memory Interface: MMC Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	1000 Order	--
TC58CVG0S3HQAIE -ND	TC58CVG0S3HQAIE	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Clock Frequency: 104MHz Access Time: 155s Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	1000 Order	1+: $0
TH58NVG4S0FTA20 -ND	TH58NVG4S0FTA20	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 16Gb (2G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG0S3HBAI6 -ND	TC58BVG0S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	14 Order	--
THGBMDG5D1LBAIT -ND	THGBMDG5D1LBAIT	Toshiba Memory America, Inc.	View more Series: eMMC Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Clock Frequency: 52MHz Memory Interface: MMC Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11x10)	1000 Order	--
TC58CVG0S3HRAIG -ND	TC58CVG0S3HRAIG	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Clock Frequency: 104MHz Access Time: 155s Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	1000 Order	--
TH58NVG4S0HTAK0 -ND	TH58NVG4S0HTAK0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 16Gb (2G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TH58BVG2S3HTAI0 -ND	TH58BVG2S3HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG3S0FTA00 -ND	TC58NVG3S0FTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG1S3HTA00 -ND	TC58BVG1S3HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--

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