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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TPCL4203(TE85LF )-ND	TPCL4203(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 200A Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Chip LGA (1.59x1.59)	1000 Order	1+: $0
TPCL4202(TE85LF )-ND	TPCL4202(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 200A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Chip LGA (1.59x1.59) Base Part Number: TPC*202	1000 Order	1+: $0
SSM6N35FELMTR-N D	SSM6N35FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6N35	1000 Order	4000+: $0.0507
SSM6N58NULFTR-N D	SSM6N58NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	18000 Order	3000+: $0.0909
SSM6P35FE(TE85L F)TR-ND	SSM6P35FE(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6P35	4000 Order	4000+: $0.0897
SSM6L09FUTE85LF TR-ND	SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0652
SSM6N37CTD(TPL3 )TR-ND	SSM6N37CTD(TPL3 )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 140mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: CST6D Base Part Number: SSM6N37	1000 Order	1+: $0
SSM6N7002BFE(T5 LFCT-ND	SSM6N7002BFE(T5 L,F	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6N7002	1000 Order	1+: $0
SSM6N56FELMTR-N D	SSM6N56FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0609
SSM6L16FETE85LF TR-ND	SSM6L16FETE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	1000 Order	4000+: $0.0753
SSM6N61NULFTR-N D	SSM6N61NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFNB (2x2)	3000 Order	3000+: $0.1089
SSM6N35AFULFTR- ND	SSM6N35AFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.0652
SSM6N42FE(TE85L F)TR-ND	SSM6N42FE(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6N42	1000 Order	1+: $0
SSM6N357RLFTR-N D	SSM6N357R,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	1000 Order	3000+: $0.1011
TPC8407LQ(S-ND	TPC8407,LQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A, 7.4A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	2500+: $0.3515
SSM6N57NULFTR-N D	SSM6N57NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN(2x2)	3000 Order	3000+: $0.0968
SSM6N67NULFTR-N D	SSM6N67NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	1000 Order	3000+: $0.0968
TPC8212-H(TE12L Q,M-ND	TPC8212-H(TE12L Q,M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	1000 Order	1+: $0
TPCP8401(TE85L, F)-ND	TPCP8401(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25C: 100mA, 5.5A Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	1000 Order	1+: $0
SSM6L61NULFTR-N D	SSM6L61NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	3000 Order	3000+: $0.1089
TPC8221-HLQ(S-N D	TPC8221-H,LQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	1+: $0
SSM6N7002BFELMT R-ND	SSM6N7002BFE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.04
SSM6N7002CFULFT R-ND	SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 170mA Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 285mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0333
SSM6L35FELMTR-N D	SSM6L35FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6L35	4000 Order	4000+: $0.0873
SSM6N815RLFTR-N D	SSM6N815R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Rds On (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.8W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	3000 Order	3000+: $0.1089
SSM6N15AFELMTR- ND	SSM6N15AFE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6N15	1000 Order	4000+: $0.0478
SSM6L13TU(T5LFT )-ND	SSM6L13TU(T5L,F ,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	1000 Order	1+: $0
SSM6N37FELM(TTR -ND	SSM6N37FE,LM(T	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0478
TPC8213-H(TE12L Q,M-ND	TPC8213-H(TE12L Q,M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	1000 Order	1+: $0
SSM6N43FULFTR-N D	SSM6N43FU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 200mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.058
SSM6N15AFULFTR- ND	SSM6N15AFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0449
TPC8211(TE12L,Q ,M)-ND	TPC8211(TE12L,Q ,M)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.5A Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	1000 Order	1+: $0
TPCL4201(TE85LF )-ND	TPCL4201(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 200A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 500mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Chip LGA (1.59x1.59) Base Part Number: TPC*201	1000 Order	1+: $0
SSM6N7002BFULFT R-ND	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Base Part Number: SSM6N7002	1000 Order	1+: $0
TPC8405(TE12L,Q ,M)-ND	TPC8405(TE12L,Q ,M)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A, 4.5A Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	1000 Order	1+: $0
SSM6N39TULF-ND	SSM6N39TU,LF	Toshiba Semiconductor and Storage	View more Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 119 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 500mW Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	1000 Order	3000+: $0.0956
TPC8223-HLQ(S-N D	TPC8223-H,LQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	2500+: $0.3515
SSM6N48FULF-ND	SSM6N48FU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.058
SSM6L35FU(TE85L F)TR-ND	SSM6L35FU(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
SSM6L12TULF-ND	SSM6L12TU,LF	Toshiba Semiconductor and Storage	View more Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Power - Max: 500mW Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	1000 Order	3000+: $0.0939

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