![2SC4617EBTLS Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
2SC4617EBTLS Discrete Semiconductor Products |
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Allicdata Part #: | 2SC4617EBTLSTR-ND |
Manufacturer Part#: |
2SC4617EBTLS |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 50V 0.15A EMT3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 150m... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
6000 +: | $ 0.02117 |
15000 +: | $ 0.01799 |
30000 +: | $ 0.01693 |
75000 +: | $ 0.01588 |
150000 +: | $ 0.01411 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Base Part Number: | 2SC4617 |
Description
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, div class="article"The 2SC4617EBTLS is a high-power transistor that belongs to the single bipolar junction transistor (BJT) category. It has been manufactured by Toshiba, which has the highest standards for quality and durability. The 2SC4617EBTLS is a reliable and cost-effective switching device for various applications. The 2SC4617EBTLS is a silicon NPN epitaxial-planar transistor, which is mainly used for general-purpose and high-frequency amplification. It offers excellent low noise, high-speed switching performance, and is widely used in switching power supplies. It features an emitter-to-base breakdown voltage (BVceo) rating of 115V, which makes it ideal for use in high-voltage circuits. The 2SC4617EBTLS features a maximum collector-to-emitter voltage rating of 130V, a maximum emitter-to-collector voltage rating of 80V, and a maximum collector current rating of 4A. It also has an operating junction temperature rating of 150°C and a storage temperature rating of -55°C to 150°C. The 2SC4617EBTLS has a peak collector current of 6.5A and a maximum power dissipation of 40W. The 2SC4617EBTLS’s working principle is that it is a unipolar device which means the collector current (Ic) is responsible for the ability to be in an OFF state or an ON state. It has four layers: the base, the emitter and the collector. When voltage is applied across the emitter and the collector, it will decrease the barrier potential of the junction (Vce). This in turn will reduce the resistance across the junction and increase the current flow across it. The other important factor of the 2SC4617EBTLS is its gain. The gain of the device is the ratio of collector current (Ic) to emitter current (Ie). Its typical gain range is anywhere between dc gain of 50 to 100 with an ac gain of 900 to 2000 depending on other external conditions like temperature, width of the base current pulse, and on the device itself. Thanks to its excellent switching characteristics, the 2SC4617EBTLS is suitable for various applications including power supplies, inverters, voltage regulators, line drivers, and motor control. Furthermore, it can be found in various industrial, automotive, and consumer electronics such as audio amplifiers, laser printers, and power amplifiers.In summary, the 2SC4617EBTLS is a reliable and cost-effective transistor that is suitable for high-voltage applications. It offers excellent low noise, high-speed switching performance, and high gain. It is widely used in switching power supplies, motors control, line drivers, inverters, and other industrial, automotive, and consumer electronics applications.
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