2SC5866TLR

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The 2SC5866TLR epitaxial planar NPN transistor is a device in the bipolar transistor (BJT) family. The 2SC5866TLR has several unique characteristics, making it one of the most versatile devices in its class.

The polarization type of the 2SC5866TLR is NPN. It has short collector-emitter saturation voltage and high DC gain, making it suitable for a wide range of applications. The current gain of the 2SC5866TLR is typically in the range of 20-50, with a maximum gain of 75.

The maximum current that the 2SC5866TLR can handle is 0.5 A. It can operate at up to 100 volts, allowing it to be used for a variety of power supply applications. It also has a low power dissipation specification, making it suitable for use in battery-powered circuitry.

The maximum power dissipation of the 2SC5866TLR is 2.5 watts, and the power dissipation is temperature dependent. It is intended to be used in switched mode power supplies and other circuits where high current is required.

The 2SC5866TLR has a wide range of applications. It can be used in frequency modulation (FM) transmitters, cell phone base stations, and other circuit designs where high power and low noise is required. Additionally, it can be used in audio amplifiers, motor control, and digital-to-analog converters (DAC). In this way, the 2SC5866TLR can be used for a variety of operational and power management purposes.

The working principle of the 2SC5866TLR is based on two transistors: the base and collector-emitter junction. The base-emitter junction behaves like a diode and allows current to flow in only one direction. The collector-emitter junction functions as an ohmic resistor and allows current to flow in both directions.

The working principle is a variation of the classical avalanche effect. As the current flow increases, the base-emitter junction suffers an avalanche breakdown and allows higher levels of current to pass through the collector-emitter junction. As the current flow continues to increase, the current gain increases. This increase in current gain is responsible for the high voltages and currents that can be obtained from the 2SC5866TLR.

In conclusion, the 2SC5866TLR is a versatile device that can be used in a variety of applications. It has a short collector-emitter saturation voltage and a high DC gain, making it suitable for a wide range of power supply applications. This device has a low power dissipation specification and is ideal for use in circuits where high current is required. The working principle of the 2SC5866TLR is based on an avalanche effect which allows higher levels of current flow to pass through the collector-emitter junction.

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