Allicdata Part #: | 2SD217700ATB-ND |
Manufacturer Part#: |
2SD217700A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 2A MT-2 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 110MHz 1W Thro... |
DataSheet: | 2SD217700A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 200mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 110MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | MT-2-A1 |
Base Part Number: | 2SD2177 |
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2SD217700A Application Field and Working Principle
2SD217700A is a type of single bipolar junction transistor (BJT). It is composed of three terminals, which are the collector, base and emitter. The symbol of the single BJT transistor is often shown as an arrow inside triangle, which represents the current flow direction. 2SD217700A is usually classified as a general-purpose transistor, meaning it can be applicable in a variety of areas. The typical application fields are audio amplifiers, radio receivers, switching circuits and other amplifier applications.
The operations of BJT transistors typically involve the injection of charge carriers from the base to the collector region. This causes the conduction from one node to the other. The internal operating principle and structure of 2SD217700A features a PN-junction between the base and the emitter as well as between the collector and the emitter. The base of 2SD217700A is quite sensitive and it is normally supplied with a very small voltage, where only a small fraction of current flows within it.
When the current flows through, it can cause the all the currents from the collector to be activated. This physical phenomenon is known as the transistor action. Most of the current flow in the single BJT transistor is from the collector to the emitter. The gate current flowing through the base junction causes the transistors to function as a current amplifier.
Furthermore, in terms of power-handling capacity, 2SD217700A is generally rated at a maximum of 500 mA current and a maximum of 50V of collector voltage. This transistor can generally work at low frequencies up to 500 kHz, with a total of 60 watts and 50 watts of collector dissipation power.
When a single BJT transistor is used, one must take note of the biasing of the transistors. To ensure a transistor works correctly, one must maintain the current and voltage depending on the circuit schematic and classes of amplifiers. When the bias is correctly set, it will eventually dictate the amount of voltage and current running into the transistor, hence limiting the power dissipation.
In conclusion, 2SD217700A is a single bipolar junction transistor (BJT) which is applicable for a wide range of purposes. Its internal structure consists of the collector, base and the emitter in which the gate current is the reason that current can be amplified. This transistor is usually rated at 500 mA of current, 50V of voltage, and a maximum frequency of 500 kHz. The biasing of the transistors must also be taken note of to ensure it works properly.
The specific data is subject to PDF, and the above content is for reference
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