2SD22580RA Allicdata Electronics
Allicdata Part #:

2SD22580RATB-ND

Manufacturer Part#:

2SD22580RA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN DARL 50V 1A MT-2
More Detail: Bipolar (BJT) Transistor NPN - Darlington 50V 1A 1...
DataSheet: 2SD22580RA datasheet2SD22580RA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-2-A1
Base Part Number: 2SD2258
Description

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Transistors are used in a variety of applications, from simple power amplifiers to complex integrated circuits. The 2SD22580RA is a Bipolar Junction Transistor (BJT), or a "single" transistor, which is commonly used as a switching and amplifying device. This guide explores the application fields of the 2SD22580RA as well as its working principle.

Application Fields

The 2SD22580RA is a NPN medium power silicon transistor, meaning it is optimized for voltage amplifications. It is particularly useful in low-voltage, low-frequency circuit applications such as monitors, TVs and DC-DC converters. The 2SD22580RA has a high speed switching capability, and can be used to switch between two different voltages. It is ideal for high speed switching such as solid state relays, and switching applications with high frequency components.

Features

The 2SD22580RA has a number of features which make it suitable for these application fields, including:

  • High current gain (hFE) of up to 500mA.
  • Low collector-emitter saturation voltage.
  • Excellent linearity in the input/output characteristic.
  • High output current capability.
  • High speed operation, allowing for a wide range of frequencies.

Working Principle

The basic operation of a Bipolar Junction Transistor is that of a two-port device, in which an input voltage is connected to a base terminal and an output current is taken from the collector terminal. When the base voltage is increased, current begins to flow from the collector to the emitter. This current is then amplified in a linear manner, depending on the current gain (hFE). This process, known as forward or active bias, is the basic operating principle of the 2SD22580RA.

The 2SD22580RA also has a reverse bias or cutoff mode. This is when the base voltage is decreased, causing the output current to drop to zero. In this condition, the 2SD22580RA is said to be in a cutoff state. This is useful for switching applications where the 2SD22580RA needs to switch between two different voltages.

Conclusion

The 2SD22580RA is a NPN medium power switching transistor, which is ideal for low-voltage, low-frequency applications such as monitors, TVs and DC-DC converters. It has a high current gain (hFE) of up to 500mA, low collector-emitter saturation voltage, excellent linearity in the input/output characteristic and a high speed operation, making it suitable for a wide range of frequencies. The working principle of the 2SD22580RA is that of a two-port device which amplifies an input voltage in a linear manner, allowing for control of the output current.

The specific data is subject to PDF, and the above content is for reference

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