Allicdata Part #: | 2SD2656FRAT106TR-ND |
Manufacturer Part#: |
2SD2656FRAT106 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN LOW VCE(SAT) TRANSISTOR (COR |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 400MHz 200mW S... |
DataSheet: | 2SD2656FRAT106 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05027 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 100mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 400MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
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2SD2656FRAT106 Application Field and Working Principle
Transistors - Bipolar (BJT) - Single consists of two types of transistors: the npn type and the pnp type. The 2SD2656FRAT106 is a 60V, 0.3A Silicon NPN power transistor from Rohm Corporation of Japan. It is intended for use in power switch circuits.
2SD2656FRAT106 Features
- NPN Silicon type.
- 60V (Vceo) Collector-Emitter Voltage.
- 0.3A (Ic) Collector Current.
- Good frequency response.
- High speed switching.
- High voltage surge and high frequency applications.
2SD2656FRAT106 Applications
The 2SD2656FRAT106 is mainly used in power switches, voltage regulators and current switching circuits. It is mainly used for switching operations in low voltage power supplies and other related circuits.
- Small-signal switching applications.
- General purpose power amplifier.
- High speed switching.
- Helicopter radio control systems.
- High voltage surge and high frequency applications.
- Small-signal switching and amplifier circuits.
- High voltage DC motor speed control.
- Small motor controls.
2SD2656FRAT106 Working Principle
A transistor is a three-terminal electronic device that has the ability to control current flow. It works by using two p-n junctions separated by a thin layer of Silicon. The 2SD2656FRAT106 is an NPN type, meaning that it is made up of a p-type Silicon layer surrounded by n-type material. This NPN transistor works by applying a bias voltage to the Base electrode. When a small current flows through the Base-Emitter junction, a large current is allowed to flow from Collector to Emitter. The amount of current amplification is determined by the ratio of the resistance of the Collector and Emitter.
When the Base-Emitter junction is forward biased, minority carriers (electrons) are injected into the base region, and a small current flows. As the Base current increases, more electrons are injected into the base region, increasing the Base current and allowing a larger current to flow from the Collector to the Emitter. The Collector current can be controlled by the input Base current, which allows the 2SD2656FRAT106 to be used as a switch. When the Base-Emitter junction is reverse biased, no current flows in the transistor and it is considered to be “off”.
The 2SD2656FRAT106 has a wide variety of applications and is suitable for a variety of switching, amplifier and control circuits. Its high speed switching capabilities and high voltage surge capabilities make it well-suited for applications that require switching between a high voltage and a low voltage. The frequency response is also very good, making it suitable for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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