2SD2656T106 Allicdata Electronics
Allicdata Part #:

2SD2656T106TR-ND

Manufacturer Part#:

2SD2656T106

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 30V 1A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 30V 1A 400MHz 200mW S...
DataSheet: 2SD2656T106 datasheet2SD2656T106 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 200mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: 2SD2656
Description

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Single Bipolar Junction Transistors (BJTs) are one of the most commonly used types of transistors, used in a wide range of electronic equipment. One such single bipolar junction transistor is the 2SD2656T106, which is used for amplifier applications. This article will discuss the application field and working principles of the 2SD2656T106 single bipolar junction transistor.

The 2SD2656T106 is a NPN transistor, with a collector current rating of 0.2A, and a collector-emitter voltage rating of 30V. This PNP transistor has a very low collector-emitter saturation of 0.2V and a very high current gain of 80-130. It is an ideal choice for audio applications, due to its exceptional frequency response and low noise. The 2SD2656T106 can also be used in power stages, as it has excellent power gain characteristics.

The 2SD2656T106 is most commonly used as an amplifier, as it has a wide voltage range, coupled with high current gain. This transistor can be used in single ended or push-pull circuit configurations, and has a wide dynamic range with low distortion characteristics. It is ideal for audio amplifiers, as it can produce high audio power outputs, while still maintaining excellent sound quality.

The working principle of the 2SD2656T106 single bipolar junction transistor is based on the three-terminal structure of transistors. The three terminals are the base, collector, and emitter, and each one is responsible for controlling the flow of current. The base terminal is used to control the current flow from the collector to the emitter. This is done by applying a small base current, which causes a large current flow from the collector to the emitter. This is known as the “current gain” of the transistor, and is referred to as “hFE”.

The current gain of the 2SD2656T106 is quite high, ranging between 80 and 130. This allows the transistor to generate high audio power outputs, while maintaining excellent sound quality. The 2SD2656T106 is also characterized by its high collector-emitter saturation voltage, which allows it to operate at high voltages without generating significant distortion. This allows the 2SD2656T106 to be used in a wide range of audio amplifiers and power stages.

In conclusion, the 2SD2656T106 single bipolar junction transistor is an excellent choice for audio amplifiers and power stages. It is characterized by its high collector current rating and its low collector-emitter saturation voltage. The large current gain of this transistor allows it to produce high power outputs, while still maintaining excellent sound quality. It is also characterized by its wide dynamic range, allowing it to operate at high voltages without considerable distortion.

The specific data is subject to PDF, and the above content is for reference

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