2SD2701TL Allicdata Electronics
Allicdata Part #:

2SD2701TLTR-ND

Manufacturer Part#:

2SD2701TL

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 12V 2A TUMT3
More Detail: Bipolar (BJT) Transistor NPN 12V 2A 300MHz 800mW S...
DataSheet: 2SD2701TL datasheet2SD2701TL Datasheet/PDF
Quantity: 3000
3000 +: $ 0.11279
6000 +: $ 0.10551
15000 +: $ 0.09824
30000 +: $ 0.09702
Stock 3000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 800mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TUMT3
Base Part Number: 2SD2701
Description

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2SD2701TL is a single NPN transistor belonging to the bipolar junction transistor (BJT) family. It is mainly used as a switching element in various electronic devices. This transistor features a high current gain, a low saturation voltage, good on-off characteristics, and low power dissipation. Its applications include switching relays, audio amplifiers, automotive amplifiers, and electronic ballasts.

The structure of a bipolar junction transistor (BJT) is composed of three regions: an emitter region, a base region, and a collector region. The emitter region is the negative terminal of the BJT, while the collector is the positive terminal. The base region acts as the control unit and determines the behavior of the transistor by controlling the amount of current that passes through the transistor. It is composed of two oppositely doped silicon or germanium layers.

The working principle of the 2SD2701TL transistor is as follows. The transistor behaves like a light switch. When the base is forward biased with a small current, this current passes through the junction and the transistor allows a large current to flow from the collector to the emitter. When the base current is stopped, the transistor blocks the current flow. This cut off behavior is ideal for switching applications. The 2SD2701TL has a relatively high current gain, which makes it well suited for amplification and switching control.

The 2SD2701TL transistor can be used in a variety of applications. It is commonly found in automobile applications, such as headlight dimmers, speakers, and other circuits. It is also used in audio amplifiers and power supplies. As it is a single NPN transistor, it can also be used in various other amplifier circuits. For example, it can be used to amplify low-level signals or provide buffering for amplifier circuits. In addition, the 2SD2701TL can be used in common-collector configuration to provide an improved voltage gain.

The 2SD2701TL is suitable for low-power applications, as it exerts low dissipated power. This makes it ideal for portable electronic devices. Due to its good on-off switch characteristics, it is also well suited for power management functions. Additionally, it has a low saturation voltage which makes it ideal for switchmode power supplies.

In conclusion, the 2SD2701TL is a single NPN transistor belonging to the bipolar junction transistor (BJT) family. It is primarily used in low-power applications due to its low power dissipation, good on-off characteristics, and low saturation voltage. It is commonly found in automobile applications, audio amplifiers, and power supplies. The 2SD2701TL can also be used in various switching and amplifier circuits due to its high current gain.

The specific data is subject to PDF, and the above content is for reference

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