| Allicdata Part #: | 2SD21790RATB-ND |
| Manufacturer Part#: |
2SD21790RA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS NPN 50V 5A MT-2 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 5A 80MHz 1W Throu... |
| DataSheet: | 2SD21790RA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 3-SIP |
| Supplier Device Package: | MT-2-A1 |
| Base Part Number: | 2SD2179 |
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The 2SD21790RA is a single bipolar junction transistor (BJT). It is a three-terminal semiconductor device used in the design of various electronic circuits that require a high degree of control over the current or voltage. It is able to serve a variety of important functions, such as amplification, switching, and voltage regulation. The 2SD21790RA can be classified as either a NPN or PNP type of BJT.
The 2SD21790RA is suitable for low voltage applications and is commonly used in radio communications and instrumentation equipment. It is able to withstand exceptionally high power levels, making it an ideal choice for applications that require a high level of control and reliability. The device offers excellent performance in terms of its high current handling capabilities, low power dissipation, and low noise levels. In addition, the 2SD21790RA is also very reliable and robust, making it a popular choice for the most demanding applications.
The 2SD21790RA works by using the principle of current control. It consists of two layers of different materials; an electrons rich layer and a hole rich layer. When a current is applied to the base terminal of the device, it causes the electrons in the electron rich layer to flow towards the hole rich layer, allowing the current to flow between the emitter and collector terminals. The number of freely-flowing electrons can be varied by controlling the current applied to the base terminal, allowing the device to serve as a voltage or current amplifier.
In summary, the 2SD21790RA is a single bipolar junction transistor that is suitable for use in a wide range of applications, including radio communications and instrumentation equipment. It has excellent characteristics, such as its high current-handling capabilities, low noise levels, and low power dissipation levels. The device operates using the principle of current control and is able to serve various important functions, such as voltage and current amplification, and voltage regulation. This makes the 2SD21790RA a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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2SD21790RA Datasheet/PDF