2SD2257(Q,M) Allicdata Electronics
Allicdata Part #:

2SD2257(QM)-ND

Manufacturer Part#:

2SD2257(Q,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 3A 100V TO220-3
More Detail: Bipolar (BJT) Transistor NPN 100V 3A 2W Through H...
DataSheet: 2SD2257(Q,M) datasheet2SD2257(Q,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS
Description

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The 2SD2257 (Q,M) is a NPN Silicon power transistor known for its advanced features and practical applications. This transistor is a single-bipolar, wideband type device made of a single-layer silicon chip, with NPN connections and unique construction methods. The device offers great electrical performance and is suitable for various types of low-current power applications. It is used in switching power supplies and general-purpose low power applications.

The 2SD2257 (Q,M) is an NPN-type, wideband transistor with an emitter-base breakdown voltage of 40V and a collector-emitter breakdown voltage of 40V. It has an operating temperature range of -55 to +150 degrees Celsius. It has a maximum power dissipation of 100mW and a load capacitance of 1-5pF. It has a large forward current gain of 400. It is also recognized for its small signal amplifying capability and low noise characteristics.

The 2SD2257 (Q,M) is widely used in signal processing, signal amplification, and other applications in which a low-noise signal is desired. Its high gain allows for efficient operation in signal processing tasks, such as signal filtering, modulation, and wave shaping. Additionally, the 2SD2257 (Q,M) is suitable for use in low-voltage audio transistors, such as switches, amplifiers, and voltage regulators. It has applications in radio communication, RF circuits, and electromechanical systems as well.

The 2SD2257 (Q,M) is a popular choice for use in applications that require both low noise characteristics and good voltage gain. Its low noise and wide operating temperature range make it suitable for use in power switching, audio amplifiers, and other high-performance, high-voltage applications. Additionally, the device\'s robust construction makes it able to withstand high-stress environments.

The working principle of the 2SD2257 (Q,M) is based on the fact that current can be controlled when a voltage is applied. This is because a voltage applied to the base-emitter junction of an NPN transistor causes the flow of current, which is then amplified depending on the load applied. When an AC signal is applied, the current flow will increase or decrease depending on the voltage and frequency applied. Thus, the 2SD2257 (Q,M) can be used to amplify, shape, and switch signals.

In power applications, the 2SD2257 (Q,M) can be used as a switch, regulator, or amplifier. As a switch, it can be used to turn power on and off. As a regulator, it can be used to maintain a set voltage, current, or power. As an amplifier, it can be used to increase the input signal strength or to provide feedback for controlling the output. More complex systems often involve a combination of these functions, requiring the transistor to be able to operate at different frequencies and power levels.

Overall, the 2SD2257 (Q,M) is an ideal device for power applications, offering good electrical performance, low noise characteristics, and wide operating temperature range. It is suitable for use in low-voltage audio and RF circuits, switching power supplies, and other low-power applications. Additionally, its robust construction makes it suitable for high-stress tasks, such as powering electromechanical systems.

The specific data is subject to PDF, and the above content is for reference

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