Allicdata Part #: | 2SD2264TV2R-ND |
Manufacturer Part#: |
2SD2264TV2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 20V 3A ATV |
More Detail: | Bipolar (BJT) Transistor NPN 20V 3A 290MHz 1W Thro... |
DataSheet: | 2SD2264TV2R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 100mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 290MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | ATV |
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2SD2264TV2R is a kind of single-pole bipolar junction transistor (BJT). It is mainly used in switching and amplifier applications. With features like high voltage and breakdown rating, this device is suitable for use in a wide range of applications where high voltage and current switching is required.
2SD2264TV2R is a NPN-type transistor, constructed from a semiconductor material to form two principal regions. One is the base, which is adjoined to the collector region and the other is the emitter. The transistor has three layers and is divided into two sections. The first layer is the base layer and the second layer is the emitter layer. The third layer is the collector layer. When a voltage is applied to the base, it will cause a current to flow between the emitter and the collector.
The structure of 2SD2264TV2R enables it to have large current gain and reliability, making it suitable for power switch and amplifier applications. This device has a collector-emitter current rating of 4A and a collector-emitter voltage rating of 600V. It can operate at high temperature up to 150 degrees Celsius. It features high voltage and high current gain, and is suitable for use in switching and amplifier circuits.
2SD2264TV2R has a wide range of applications, including radio frequency power amplifier, switching power amplifiers, power switches, high voltage amplifiers, etc. This device can be used as a switch to control large current or voltage in a circuit. It is also suitable for use in RF transmitter and receiver applications. 2SD2264TV2R is also used in switching and amplifier circuits due to its high current gain and reliability.
The working principle of 2SD2264TV2R is very simple. When a small current passes through the base, it produces a larger current that passes through the collector-emitter terminal. This is known as transistor amplification. It is also used as a power switch, as it can control large amount of current or voltage with a smaller current. This makes it suitable for switching applications.
2SD2264TV2R is a versatile BJT that can used for switching and amplifier applications. It has a high collector-emitter current and voltage rating, making it suitable for use in a wide range of applications. Its working principle is also very simple, making it easy to use and reliable. This device is suitable for RF power amplifier, switching power amplifiers, power switches and high voltage amplifiers.
The specific data is subject to PDF, and the above content is for reference
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