2SD2374AP Allicdata Electronics
Allicdata Part #:

2SD2374AP-ND

Manufacturer Part#:

2SD2374AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 80V 3A TO-220D
More Detail: Bipolar (BJT) Transistor NPN 80V 3A 30MHz 2W Throu...
DataSheet: 2SD2374AP datasheet2SD2374AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220D-A1
Description

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2SD2374AP Application Field and Working Principle

2SD2374AP is a high power NPN Bi-polar transistor manufactured by Panasonic Semiconductor Solutions. It is available in SOT23-6L and SOT34-5L packages and is a low resistance type ideal for high power amplification and switching. When 2SD2374AP is used in circuits, it is necessary to consider the application field and the working principle of the transistor.

Application Field

The application field of 2SD2374AP is in power regulating. This high power NPN bi-polar transistor is divided into two types, namely, amplifier and switch. With its strong drive ability, it can be used as an amplifier to boost weak electrical signals while with its low on-state resistance, it can be used as a switch to turn on/off electrical appliances. In addition, since it has wide power dissipation and massive energy output, it is suitable for high power applications, such as power motors and power supplies.

Aside from power regulating, 2SD2374AP is also found in communication, such as serving as a radio and other telecommunications devices. With its relatively low power output, it is also suitable for small electrical circuits, such as message boxes, residential doorbells, and other household appliances.

Working Principle

2SD2374AP is a bipolar junction transistor (BJT) that operates on a single power source. The BJT works by combining two p-type and n-type materials on a single semiconductor, which forms an internal PN junction. This junction will develop an electric field and form a space charge layer called a depletion region. The space charge layer serves as an insulator and prevents electrons from being exchanged between the two regions.

When a current passes from the collector to the base, it will be harnessed by the depletion layer and transferred to the emitter. The transistor will amplify this signal and it will be driven to the load connected to the collector terminal. With its low on-state resistance, 2SD2374AP allows a high current through the collector and emitter, which explains its ability to provide high power output.

Conclusion

2SD2374AP is a high power NPN bi-polar transistor manufactured by Panasonic Semiconductor Solutions, which is capable of providing strong drive ability and having low on-state resistance. Its potential application field is power regulating and communications. It works on a single power source and combines two p-type and n-type materials to form an internal PN junction, which is responsible for amplifying weak signals and providing high power output.

The specific data is subject to PDF, and the above content is for reference

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