Allicdata Part #: | 2SD23750P-ND |
Manufacturer Part#: |
2SD23750P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 60V 3A TO-220D |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 50MHz 2W Throu... |
DataSheet: | 2SD23750P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 800 @ 500mA, 4V |
Power - Max: | 2W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220D-A1 |
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The 2SD23750P transistor is a type of bipolar (BJT) single junction field effect transistor (JFET). It is a commonly used transistors due to its high-frequency characteristics and low voltage requirements, making it suitable for many applications. It is frequently used as a voltage amplifier or as a switch.
The 2SD23750P is a n-channel JFET transistor, which means it is constructed using n-doped semiconductor material. N-channel devices operate by allowing electrons to flow through a semiconductor channel along a route. When current is applied to the gate of the transistor, it induces electrons in the semiconductor channel. This, in turn, attracts smaller holes, thus creating a depletion zone that prevents any charge carriers from entering the channel. As a result, the gate voltage will control the current flowing through the transistor.
The 2SD23750P transistor has an average current gain of 1000 and a maximum gate voltage of 20V. This transistor is great for applications such as switching, low-level amplification, and audio preamplifiers. Furthermore, 2SD23750P transistors are often used as variable-current-control elements, which enable variable current flow in circuits when their gate voltage is changed.
The 2SD23750P employs a Darlington transistor configuration, which allows it to have high input resistance and superior gain compared to traditional BJTs. This configuration consists of two transistors connected together, whose base-emitter combinations produce a single collector. The Darlington pair is much more efficient than a single BJT and has a negligible voltage drop due to its high-current amplification. As a result, it is an ideal choice for applications where low input current and high output current are needed.
The 2SD23750P is an excellent choice for applications where high current is needed, and its small size makes it a great choice for tight spaces. Additionally, its low power consumption and high switching speed reduce unwanted heat buildup in the circuit. Furthermore, this transistor can be used in a wide range of temperatures, making it suitable for a variety of environments and applications.
Overall, the 2SD23750P is a versatile, reliable, and durable transistor. It is perfect for applications where high current amplification and high input resistance is needed and offers exceptional switching speed and stability. Its small size makes it ideal for tight spaces and its robust construction allows it to operate at a wide range of temperatures, making it the perfect choice for many different uses.
The specific data is subject to PDF, and the above content is for reference
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