Allicdata Part #: | 2SD2705STP-ND |
Manufacturer Part#: |
2SD2705STP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 20V 0.3A 3PIN SPT |
More Detail: | Bipolar (BJT) Transistor NPN 20V 300mA 35MHz 300mW... |
DataSheet: | 2SD2705STP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 820 @ 4ma, 2V |
Power - Max: | 300mW |
Frequency - Transition: | 35MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-72 Formed Leads |
Supplier Device Package: | SPT |
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The 2SD2705STP is a classic NPN silicon transistor that belongs to the bipolar junction transistor (BJT) single family. It is very commonly used inamplification, amplification of simple signals and switch mode applications. Typical applications include power switching circuits, power amplifier circuits, low voltage motor control, switching applications, and analog signal circuits.
The construction of a 2SD2705STP is similar to other BJT transistors. It is made up of three layers, the emitter, collector and base layer, which are supplied with push-pull voltages and currents. The emitter is the element that provides the majority of the current to the collector, while the base is the element that controls the amount of current flowing from the emitter to the collector. The base current controls the collector current level and voltage, which in turn influences the total current left in the transistor.
In addition, the 2SD2705STP has a very important feature called the biasing voltage. This is the voltage that must be supplied to the base in order for the transistor to function properly. The biasing voltage enables the transistor to switch between two states, OFF and ON. When the biasing voltage is applied, the collector current increases, thereby making the transistor more responsive. On the other hand, when the biasing voltage is removed, the transistor turns OFF. Thus, the biasing voltage is vital for proper operation.
In terms of working principle, the 2SD2705STP uses the same principle as any other BJT transistor. This means that it uses the region between the base and collector layers to amplify the current between them. This is achieved by using the bias voltage to control the amount of current flowing from the emitter to the collector. When the bias voltage is increased, the increased current through the base layer creates a larger voltage drop. This in turn triggers the collector current to increase, and the amplifier gain is produced.
Compared to other BJT transistors, the 2SD2705STP is a very high-performance transistor. It has high current gain, low noise, and a wide frequency response range. Also, its collector-to-emitter voltage (Vce) is relatively low, making it very suitable for many applications. In general, it is an excellent choice for many circuits that require high current gain and increased reliability.
These features make the 2SD2705STP a very popular choice of transistor for many applications. It is commonly used in amplifier circuits, switch mode applications, and motor control circuits. It is also a good option for analog signal circuits, as its performance is comparable to other higher cost transistors. All in all, with its high current gain and wide frequency response range, the 2SD2705STP is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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