2SJ610(TE16L1,NQ) Allicdata Electronics
Allicdata Part #:

2SJ610(TE16L1,NQ)-ND

Manufacturer Part#:

2SJ610(TE16L1,NQ)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 250V 2A PW-MOLD
More Detail: P-Channel 250V 2A (Ta) 20W (Ta) Surface Mount PW-M...
DataSheet: 2SJ610(TE16L1,NQ) datasheet2SJ610(TE16L1,NQ) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SJ610 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by Toshiba in Japan. It is a popular component in the field of power MOSFETs and is used in many applications requiring power switches, such as power supply and power control. It is particularly suitable for applications with highly dynamic loads, such as solar cell and related energy storage systems.

The 2SJ610 is a single N-channel MOSFET that uses a silicon oxide thin-film body structure. It has a maximum drain-source breakdown voltage (BVDSS) of 10V, a gate-source voltage range from -5 to -20V, a drain-source on-state resistance (RDS(on)) of 7mΩ at a drain current of 5.4A and a typical turn-on delay time (ton) of 16ns.

The MOSFET is also equipped with temperature compensation, which helps it to maintain a consistent performance over a wide temperature range. It also has a built-in Avalanche energy-limiting diode, which helps to protect components downstream of the MOSFET from unwarranted large voltage spikes.

The 2SJ610 is mostly used in applications that require power over a wide range of supply voltages. It works by allowing electrical current to flow between its drain and source terminals when it is switched on. When the MOSFET is in the OFF state the drain and source terminals are effectively disconnected and no current flows between them.

The switching of the MOSFET is carried out by the gate terminal. When a voltage is applied to the gate terminal it produces an electric field in the semiconductor channel which then increases the conductivity of the channel. This permits electrons to flow between the drain and source terminals when an appropriate level of bias voltage is applied across the drain and source. It is also possible to adjust the current flowing through the MOSFET by adjusting the voltage applied to the gate terminal, making it an ideal device for use in systems that require high levels of control.

The 2SJ610 is usually used in medium to low power applications and is very popular in the telecommunication, computer, industrial and automotive industries. In automotive applications it is often used in electric vehicles and in generator control systems. It is also regularly employed for motor control applications, power switching and power factor correction.

The 2SJ610 is a highly reliable device with a maximum temperature operating range of -55 to +150 °C. It also features low on-state resistance and excellent thermal properties, making it a preferred choice for power switching applications in which efficiency and reliability are critical.

The specific data is subject to PDF, and the above content is for reference

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