2SJ661-1E

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.65W (Ta), 65W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4360pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	39 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	38A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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＜p＞2SJ661-1E, also known as an Insulated Gate Bipolar Transistor (IGBT), is a type of field-effect transistor (FET) which combines the fast switching time of an FET and the low on-state resistance of a bipolar transistor. It has a variety of applications in the field of electrical engineering, ranging from high-power switching to high-frequency devices. In this article, we will discuss the 2SJ661-1E\'s application field and working principle.＜/p＞＜p＞The 2SJ661-1E can be widely used in the power electronic devices or power semiconductor circuits. It possesses a large number of advantages in the control of high power and high frequency, such as low on-state voltage drop, high on-state numerical characteristics, and non-saturating type low turn-off current. As a result, it can be used in various systems, such as automotive architectures, motor drives, uninterruptible power supply (UPS), renewable energy, and more.＜/p＞＜p＞The working principle of the 2SJ661-1E is based on the N-channel silicon insulated gate field-effect transistor (IGFET). When a positive voltage is applied to its gate, a high electric field is generated between the gate and the source. This field induces a current which flows from source to drain, thereby inducing current flow across the device. As the gate voltage is increased, the current increases until the device is fully on, resulting in an efficient and fast switching operation.＜/p＞＜p＞Furthermore, the 2SJ661-1E has a large number of advantages such as low on-state voltage drop, low switching losses, robustness, low mount-on voltage, and low noise. All these properties make it an ideal device for power electronics applications, which require switching with speed and efficiency. Additionally, the 2SJ661-1E also has a wide linear range of input voltage, which is beneficial for many power electronic applications. Moreover, it is a cost-effective solution as compared to other power switches.＜/p＞＜p＞In conclusion, the 2SJ661-1E is an IGBT-based transistor with a variety of applications in the field of power electronics. It possesses a wide linear range of input voltage, has low mounting voltage, and low switching losses. Furthermore, it is cost effective and is robust in nature. These advantages make it an ideal choice for many power electronic switching applications.＜/p＞

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