2SJ661-DL-1EX

The 2SJ661-DL-1EX is a single-channel N-channel depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in high-efficiency power applications. The device is well-suited for switching applications in automotive, consumer, and industrial markets. This application note will discuss the device’s features, applications, working principle, and provide a product overview.

Features

The 2SJ661-DL-1EX MOSFET has an optimized Gate-to-Source voltage of 4V and a Gate threshold of -3V. This allows the device to be turned on through a logic level control signal. The low Gate-to-Source voltage also helps reduce losses and power consumption. The on-resistance of the device is fairly low, allowing switching losses to be minimized in high current applications. The device is also designed to offer very low input capacitance and gate charge.

Applications

The 2SJ661-DL-1EX is well-suited for a variety of power applications, including high-efficiency switching applications in automotive, consumer, and industrial markets. Examples of some of the applications it is suitable for include motor control, lighting, and power supply applications. The device’s characteristics make it suitable for high power and efficiency requirements.

Working Principle

The 2SJ661-DL-1EX MOSFET is a depletion mode N-channel MOSFET. The device is manufactured using advanced CMOS production processes. The device consists of a metal gate, a source, and a drain, and a substrate. As the voltage between the gate and the source increases, the channel created by the metal gate narrows, reducing the current flowing between the source and the drain. As the voltage between the gate and the source decreases, the current flowing between the source and the drain increases. This operation is known as the “depletion” mode operation.

Product Overview

The 2SJ661-DL-1EX is an optimal solution for high-efficiency switching applications. The device offers low Gate-to-Source voltage, low input capacitance, low gate charge, and low on-resistance. The device’s features make it well-suited for motor control, lighting, and power supply applications. Furthermore, the device is designed to withstand high-speed operation, making it suitable for use in high-frequency switching applications.

In conclusion, the 2SJ661-DL-1EX is a single-channel N-channel depletion mode MOSFET designed for use in high-efficiency power applications. The device’s features make it suitable for a variety of applications, including motor control, lighting, and power supply applications. The device offers low on-resistance, low input capacitance, and low gate charge. Furthermore, the device is designed to withstand high-speed operation, making it suitable for high-frequency switching applications.