2SJ665-DL-1EX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SJ665-DL-1EX - Application Field and Working Principle

A 2SJ665-DL-1EX is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is a single-silicon N-channel MOSFET designed for high-speed switching applications. It is commonly used in power electronic products, digital electronics, and electronic applications that require high switching speed or fast response speed.

Typical Applications

The 2SJ665-DL-1EX can be used for a number of different applications including:

• Power supplies
• Switch-mode power supplies
• High-speed switching operations
• DC-DC converters
• Solar panel energy systems
• Printed circuit boards
• Switching regulators
• Motor control systems
• AC to DC switching circuit

Working Principle

The 2SJ665-DL-1EX works by integrating two transistors, two depletion-mode transistors and one enhancement-mode transistor. The two depletion-mode transistors act as an electronic switch to control the flow of the current. When a positive voltage is applied to the gate, the N-channel MOSFET switches to the on-state and allows current to flow from the source to the drain. When the voltage is removed, the depletion-mode transistors act to turn off the MOSFET and prevent current from flowing. The enhancement-mode transistor aids in the reduction of the total gate capacitance of the MOSFET, allowing for a faster switching speed.

Device Characteristics

The 2SJ665-DL-1EX is a 30V N-channel MOSFET, with a drain current of 500 mA, maximum drain-source voltage of 30V, maximum gate-source voltage of 9V, and a maximum drain-source on-resistance of 50 mO. These characteristics allow the device to be used in applications requiring high-speed switching operations while being energy efficient.

Advantages

The 2SJ665-DL-1EX has several advantages over other types of transistors, such as:

• Low-power consumption
• High switching speed
• Low on-resistance
• High efficiency
• Wide range of applications

Conclusion

The 2SJ665-DL-1EX is a highly efficient single-silicon N-channel MOSFET designed for high-speed switching applications. It features a low-power consumption, high switching speed, low on-resistance, and a wide range of applications. The device is widely used in power electronic products, digital electronics, and electronic applications that require high switching speed or fast response speed.

The specific data is subject to PDF, and the above content is for reference