Allicdata Part #: | 2SJ681(Q)-ND |
Manufacturer Part#: |
2SJ681(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 60V 5A PW-MOLD |
More Detail: | P-Channel 60V 5A (Ta) 20W (Ta) Through Hole PW-MOL... |
DataSheet: | 2SJ681(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PW-MOLD2 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SJ681(Q) transistor is a type of field-effect transistor (FET) specifically classified as an enhancement-mode MOSFET, or metal oxide semiconductor field-effect transistor. The 2SJ681(Q) is similar to a 2SJ681L, except that the former has a higher breakdown voltage of 85 V instead of 45 V. It has three terminals, including a source, a drain, and a gate, each with different respective functions.
One common application of the 2SJ681(Q) transistor is in power management and power conversion systems. In these systems, the transistor is used to switch the circuit between two electrical states. A gate resistor is used to control the transistor\'s operations. For example, when the gate voltage is between 5 V and 12 V, the transistor operates in its cutoff region, when the gate voltage dips below 5 V, the transistor operates in its saturation region. This allows the transistor to control the path of the current and switch between different electrical states.
In addition to power management and power conversion, the 2SJ681(Q) transistor can be used in various other applications. For example, it can be used as a voltage regulator, a switch or amplifier, in signal processing circuits, or for other sensitive operations. It can also be used for various telecom applications, such as radio transmission or speech recognition.
The 2SJ681(Q) works by allowing the flow of electric current between its source and drain terminals. This flow occurs when the voltage applied to the gate terminal reaches the threshold voltage necessary to invert the channel between the two terminals. As current flows, the threshold voltage increases and becomes higher than the voltage applied to the gate terminal, which results in the current stopping.
The 2SJ681(Q) transistor is a widely used component for various systems due to its wide range of applications, its low voltage requirements, and its favorable performance characteristics. It has many advantages over other types of transistors, such as a faster response time, lower power dissipation, and enhanced linearity. Moreover, it is also easier to mount and integrate into the circuit compared to other types of transistors. All this makes the 2SJ681(Q) an ideal choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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ERG-2SJ622 | Panasonic El... | 0.18 $ | 655 | RES 6.2K OHM 2W 5% AXIAL6... |
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