2SJ673-AZ

Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	20 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	87nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4600pF @ 10V
FET Feature:	--
Power Dissipation (Max):	2W (Ta), 32W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220 Isolated Tab
Package / Case:	TO-220-3 Isolated Tab
Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V

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2SJ673-AZ Application Field And Working Principle.

2SJ673-AZ is a type of depletion-mode metal–oxide–semiconductor field-effect transistor (MOSFET). It is a single-gate device, meaning it has just one control electrode to access the underlying semiconductor material. It is mainly used for power management, such as for efficient regulation of the current in a variety of applications. The 2SJ673-AZ has very low on-state resistance and offers excellent protection against over-current conditions.

Linear Mode Characteristics:

The linear mode of operation for a 2SJ673-AZ is when the voltage between the device terminals is constant. The linear mode of operation is characterized by a linear relationship between drain-source current and the drain-source voltage. It is mainly used for controlling the voltage across different circuits, such as in voltage regulators and power supplies.

On-state Resistance:

The 2SJ673-AZ offers very low on-state resistance (Rds). This is an important parameter as it indicates the minimum resistance value of the device when in operation; thus, it determines the power efficiency of the system. The lower the Rds value, the higher the power efficiency of the system as more current will flow with less power.

Over-current Protection:

The 2SJ673-AZ also offers excellent over-current protection. This is achieved by controlling the maximum drain-source current (Ids). The maximum Ids value is determined by the device parameters, and it can be easily set by adjusting the gate-source voltage. Once this is set, the mdevice will prevent excessive current flow. This helps increase the operational safety of electronic systems as it guards against any unexpected high current flows.

Applications:

The 2SJ673-AZ is widely used in different applications, such as voltage regulation and power management. It is especially suited for controlling low-power circuits. The device can be used for regulating the output voltage of switching power supplies and for controlling the current in automotive circuits. It can also be used in mobile phone hardware, communications hardware and consumer electronics.

Working Principle:

The working principle of the 2SJ673-AZ device is based on the ability of a channel of semiconductor material to alter its resistance in response to the applied gate voltage. When a voltage is applied to the gate of the 2SJ673-AZ, it creates an electric field. This field modulates the conductance of the underlying semiconductor channel and thereby alters its resistance. This in turn affects the flow of current in the drain-source circuit and thus the voltage drop across the device. By controlling the gate voltage, the current in the system can be regulated.

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