Allicdata Part #: | 869-1053-ND |
Manufacturer Part#: |
2SJ656 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 18A TO-220ML |
More Detail: | P-Channel 100V 18A (Ta) 2W (Ta), 30W (Tc) Through ... |
DataSheet: | 2SJ656 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220ML |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 75.5 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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2SJ656 is a silicon N−channel field effect transistor (FET) manufactured by Toshiba Semiconductor and Storage Corporation. It belongs to the single type of FETs within the family of transistors. It is applied in a wide range of fields, primarily in power management circuits. Because of its high power capability, it can be employed in applications like DC/DC converters and motor drivers.The 2SJ656 transistor is a drain-source-gate configuration FET. It is characterized by its fast switching speed, low input capacitance, and high current handling capability. The drain-source break-down voltage is rated at 120 V, with a total power dissipation of 110 W. Its operating temperature range is between −55 ± 175 °C, making it suitable for applications in both low and high temperatures.The basic principle behind the functionality of FETs is the gate voltage influencing the current flow between the drain and source. Specifically, upon applying a voltage to the gate of the FET, a channel is created through the body of the transistor, allowing current to flow from the drain to the source. The degree of the current flow depends on the polarity and magnitude of the gate voltage.When the voltage is applied to the gate of a 2SJ656 FET, this causes the conducting channel to form. This channel causes electrons to flow from the source to the drain, leading to what is known as a narrow channel effect. This effect eventually leads to a decrease in current handling capability as the channel width increases.For higher amounts of current handling capability, FETs rely on the current amplification factor or "current gain". This gain is known as the "transconductance", and is measured by how much current can be carried through the channel when a certain voltage is applied. The current gain of a 2SJ656 transistor is directly related to the drain-to-source voltage, so as this voltage increases, so does the current handling capability.The high current and power handling capability of the 2SJ656 FET makes it a popular choice for power management circuits. Its fast switching speed and low input capacitance make it ideal for applications requiring excellent control over the current, such as DC/DC converters for power supplies, motor drivers, battery chargers, and switching power circuits.Due to its outstanding performance capabilities, the 2SJ656 is a popular option for general use in many different circuits. Combined with its low cost, it has become an extremely versatile transistor choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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