2SJ661-DL-E

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2SJ661-DL-E is a type of MOSFET that is designed for various applications. It is an n-channel enhancement mode device, meaning it can be used to open or close a circuit to control current flow. It is a popular choice for power switching applications such as DC-DC converters, voltage regulators, motor control, LED lighting, and power amplifiers.

The 2SJ661-DL-E is a high-side MOSFET, meaning it is designed to be mounted on the positive side of the circuit. It features a low drain-source capacitance, low gate charge and low on-state resistance. This makes it an ideal choice for high speed switching applications where fast turn-on and turn-off times are desired.

The 2SJ661-DL-E MOSFET operates using the principle of an insulated-gate field-effect transistor (IGFET). This is basically a three-terminal device that consists of a source, drain, and gate. The gate is insulated from the other two terminals, allowing current to flow between the source and the drain when the gate is activated. The transconductance of a field-effect transistor (FET) is proportional to the gate voltage.

The 2SJ661-DL-E is designed for use in high-side switching applications and features a maximum drain current of 85A, maximum drain source voltage of 100V, and on-state resistance (RDS(on)) of 3.4mΩ. It also features a reverse recovery time of 10ns, allowing for fast switching times. The MOSFET also has a maximum junction temperature of 125°C and a maximum operating temperature range of -55°C to 125°C.

The 2SJ661-DL-E MOSFET is mainly used in high current applications such as DC-DC converters, motor control, and LED lighting. It is also often used in voltage regulators and power amplifiers. Its low on-state resistance and high drain current make it a popular choice for high-side switching applications. It is also used in low power circuits, such as microcontrollers, where low gate charge is desired.

In summary, the 2SJ661-DL-E MOSFET is a popular choice for applications that require high current and high-side switching. It operates using the principle of an insulated-gate field-effect transistor and features a low drain-source capacitance, low gate charge, low on-state resistance, and a maximum operating temperature range of -55°C to 125°C. Its wide range of uses and its capabilities make it an ideal choice for many applications.

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