2SJ652

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The 2SJ652 is an enhancement-mode power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is manufactured using silicon carbide. This device is mainly used in power applications, such as power amplifiers, power supplies, and automotive systems. Its composition and design make it suitable for use in high-temperature environments.

The key characteristic and advantage of the 2SJ652 is its high-temperature operation. It is designed to operate up to 175°C, which makes it suitable for many automotive applications. Additionally, the 2SJ652 also has an extremely low on-resistance, with a maximum of 0.012 ohms. This makes it ideal for high-current applications, as it enables the device to handle large power loads.

In terms of its working principle, the 2SJ652 is built upon an enhancement-type, N-channel power MOSFET structure. This is a three-terminal device, where the three terminals are the source, gate, and drain. The source terminal is connected to the N-channel of the transistor, while the gate is connected to the gate of the device. When a positive voltage is applied to the gate, it creates a “channel” of conductive electrons between the source and drain terminals, allowing current to flow. This process is referred to as “enhancement mode,” as the voltage is used to “enhance” current flow.

The 2SJ652 can also be combined with another form of MOSFET, known as a depletion-mode MOSFET. This type of transistor operates differently than the above-mentioned enhancement-mode MOSFET. A depletion-mode device requires a negative voltage to be applied to the gate, in order to turn off the current flow. When both enhancement- and depletion-mode MOSFETs are combined, this type of device is referred to as “complementary” or “cascode” circuit.

The 2SJ652 is used primarily in power applications, such as power amplifiers and power supplies, due to their high-temperature operation and low on-resistance. It is also well-suited for automotive applications, as it is designed to operate in high temperature environments. Additionally, the device can be combined with depletion-mode MOSFETs, creating a “complementary” or “cascode” circuit to help stabilize power applications.

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