2SJ652-RA11

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SJ652-RA11 is a single MOSFET (metal-oxide-semiconductor field-effect transistor) from Toshiba\'s RA11 series of products. The device is designed for applications including DC-DC converters, motor drive circuits, and power management circuits.

MOSFETs, or metal-oxide-semiconductor field-effect transistors, are a type of transistor used to control electric current in huge numbers of applications. They are used in both digital and analog circuits. In a MOSFET, the electric current passes through a transistor in one direction, and then flows out in a different direction.

The 2SJ652-RA11 has a drain-to-source voltage rating of 150 volts, a drain current of 5 amps, and a drain-source on resistance of 4 ohms. It also has a gate threshold voltage of 0.8 volts and an operating temperature range of -40 to +85 °C. The device is rated for a maximum power dissipation of 1.8W.

In terms of construction, the 2SJ652-RA11 consists of a source terminal, a drain terminal, and a gate terminal. It is a N-channel MOSFET, meaning that the N-type material is used as the channel layer between the source and drain. The gate terminal is used to control the current flowing through the channel, and is used to turn the device on or off.

When used in a circuit, the 2SJ652-RA11 allows current to pass through the device when the voltage applied to the gate terminal is greater than the gate threshold voltage. If a positive voltage is applied, the device will turn on. If a negative voltage is applied, the device will turn off. This is known as the "enhancement mode" of operation.

The 2SJ652-RA11 is a power MOSFET, meaning it is designed to handle large currents and voltages. Due to its low on resistance, the device is ideal for applications requiring high efficiency and power dissipation. It is also designed for applications where fast switching is required, such as motor drive circuits and DC-DC converters.

In conclusion, the 2SJ652-RA11 is a single MOSFET from Toshiba\'s RA11 series of products. It is designed for applications requiring high efficiency and power dissipation, such as motor drive circuits and DC-DC converters. The device is an N-channel MOSFET and has a drain-to-source voltage rating of 150 volts, a drain current of 5 amps, and a drain-source on resistance of 4 ohms.

The specific data is subject to PDF, and the above content is for reference