Allicdata Part #: | AO3414L-ND |
Manufacturer Part#: |
AO3414L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CHANNEL 20V 3A SOT23-3 |
More Detail: | N-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-... |
DataSheet: | AO3414L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3414L is a related FET transistor device, a type of semiconductor device found in a variety of electronic applications. It is among the most popular and widely used transistors because of its versatile functioning, efficient features, and functional adaptability. This type of FET transistor device is known as a single package field effect transistor (FET) and is developed to offer low capacitance and high signal bandwidth on the drain side. This article will discuss the application field and working principle of AO3414L.
Overview
The AO3414L is a low-cost, low-power N-channel, enhancement-mode MOSFET transistor that is developed with advanced process technology. This type of FET provides low on-state resistance, fast switching times, low power dissipation, and excellent thermal characteristics. It is highly suitable for applications such as motor control, solar energy, power supply, audio power amp, and power management.
Specifications of AO3414L
The AO3414L has the following main specifications:
- Maximum Drain-Source Voltage: 20V
- Maximum Drain Current: 0.63 A
- Maximum Gate-Source Voltage: ±20V
- On-resistance (RDSON): 0.61 Ω
Features of AO3414L
The AO3414L is equipped with a wide range of features that makes it suitable for a variety of applications. Some of its useful features include:
- Available in both surface mount and through-hole packages
- Low gate charge and low input capacitance
- High switching speed
- Low drive current and low threshold voltage
- Excellent RDS(ON) ratio
- High performance in small signal and power applications
- Ability to operate at temperature up to 175℃
Application Fields
The AO3414L is designed primarily for use in automotive applications. It can be used as a switching device in applications such as fuel injection systems, brake systems, and other motor control applications. It is also suitable for use in a wide range of consumer electronics and audio power amplifier applications.
Because of its low power consumption and low drive current, it can also be used in portable devices such as mobile phones, tablets, and other portable computing devices. Additionally, it is suitable for a variety of power management applications, such as solar energy inverters, battery management systems, and uninterruptible power supplies (UPS).
Working Principle
The AO3414L is a type of MOSFET (Metal Oxide Semiconductor FET) transistor used for switching and amplifying electrical signals. It is a three-terminal device, consisting of a source, gate, and drain, each with its own terminal connection. The source and drain are connected by a semiconductor channel, while the gate is insulated from the channel by a thin layer of metal-oxide gate material.
The gate connection is usually used to control the drain-source current flow by varying the gate voltage. When a positive voltage is applied to the gate, it causes an inversion layer of electrons to form on the surface of the oxide layer, creating an electric field across the channel. This attracts positively charged holes in the semiconductor material, creating an electron-rich structure that enables current flow from source to drain.
On the other hand, when a negative voltage is applied to the gate, it reduces the attractive force of the electric field, and the electrons in the inversion layer detach from the channel surface, forming a non-conductive channel. This has the effect of preventing current flow from the source to the drain. As such, the AO3414L can be used as either an electronic switch or an amplifier by varying the gate voltage.
Conclusion
The AO3414L is a versatile single-package FET transistor device developed for low-cost, low-power applications. It is suitable for a wide range of applications, such as automotive, consumer electronics, power management, and audio power amp applications. Its low on-state resistance, fast switching times, low power dissipation, and excellent thermal characteristics make it the ideal choice for these applications. Additionally, its working principle involves varying the gate voltage to control the drain-source current flow from the source to the drain, allowing it to be used as either an electronic switch or an amplifier.
The specific data is subject to PDF, and the above content is for reference
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