Allicdata Part #: | AO3418L-ND |
Manufacturer Part#: |
AO3418L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V SOT23 |
More Detail: | N-Channel 30V 3.8A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | AO3418L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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Introduction
The AO3418L is a low-voltage, very low-threshold metal oxide semiconductor field effect transistor (MOSFET). The transistor has excellent performance and is widely used in integrated circuits, power electronics, and other applications. In this article, we will focus on the application fields and working principles of the AO3418L.
Application Fields
The AO3418L is mainly used in the following areas:
- Integrated circuits: AO3418L MOSFETs are widely used in integrated circuits, as they offer low voltage operation, low threshold voltage, and high current ratings. For example, they can be used in power amplifiers, voltage regulators, high-speed transistors, and more.
- Power electronics: The AO3418L can be used in power electronics, such as solar cells, inverters, switchmode power supplies, and more. In these applications, the low threshold voltage and high current ratings of the device are beneficial.
- High temperature applications: The high temperature operating range of the AO3418L (200°C) makes it suitable for applications where high temperature operation is necessary.
Working Principle
The AO3418L is an N-channel MOSFET, which means that its channel is composed of n-type semiconductor material. The device has a source and drain (also known as the source and drain electrodes), and a gate, which is separated from the channel by a thin layer of insulation (known as the gate dielectric).
When no voltage is applied to the gate, the channel is off and no current flows. However, if a voltage is applied to the gate, the electrostatic force caused by the voltage will push electrons from the channel to the gate, leading to an inversion layer, which can be either n-type or p-type (depending on the type of MOSFET).
This inversion layer provides an increased conductivity path between the source and drain, allowing electrons to flow through the channel. The voltage applied to the gate can be used to control the conductivity of the channel and hence the current flowing through it.
Conclusion
The AO3418L is a low-voltage, low-threshold MOSFET which is widely used in integrated circuits, power electronics, and high temperature applications. The working principle of the device is based on the electrostatic force which is generated when a voltage is applied to the gate, allowing electrons to flow through the channel.
The specific data is subject to PDF, and the above content is for reference
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