AOD425_001

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	17 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The AOD425_001 is a single-channel, integrated FET (Field Effect Transistor) that is designed for use in power amplifier and data conversion applications. It is available in four different packages for varying PV (Power Volume) ratings and direct current levels. This combination of features makes the AOD425_001 suitable for a variety of tasks, including power amplifier/DC-DC converter applications that require high-efficiency and high-voltage operation.The AOD425_001 is a single, low-power device that offers very high performance and reliability at an attractive cost. It has an asymmetric terminal structure that provides two distinct operating modes: a linear mode and a switching mode. In the linear mode, the AOD425_001 can be used to provide low-distortion power amplification. In the switching mode, the device can be used to rapidly switch ON/OFF and control power, allowing it to be used in various applications that require high switching speeds or dynamic power control.The AOD425_001 offers a number of operational benefits including superior thermal performance, low on-resistance and high-current capability. It also features an integrated charge pump, which provides the necessary control voltage for the AOD425_001 to operate at higher voltages, allowing for higher operating efficiencies and output power.The AOD425_001 is built using an advanced CMOS process technology and features low-voltage thresholds, low-power dissipation, and excellent immunity from ESD (Electrostatic Discharge) effects. This combination of features makes the AOD425_001 ideal for a range of applications, including power amplifiers, signal conditioners and other DC-powered devices.The AOD425_001 is designed to be a cost-effective single-channel FET solution. Its advantages include low on-resistance, high-current and low times simultaneously, allowing designers to achieve high performance and reliability in a very small form factor. The AOD425_001 is available in four package options: two plastic packages, two metal packages, and an ultra-small surface mount version.The AOD425_001 features a high performance, low voltage limit and has a very low thermal resistance, making it an ideal candidate for applications that require precise thermal control. The device also features an on-chip temperature sensor, which enables precise thermal management, making it ideal for use in thermally-responsive applications.In summary, the AOD425_001 is a robust, single-channel, integrated FET suited for applications that demand precise thermal management and high-current performance. Its unique combination of features make it extremely adaptable, while its various package options make it suitable for a wide range of applications.

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