AOD4454 Allicdata Electronics
Allicdata Part #:

AOD4454-ND

Manufacturer Part#:

AOD4454

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 150V 3A TO252
More Detail: N-Channel 150V 3A (Ta), 20A (Tc) 2.5W (Ta), 100W (...
DataSheet: AOD4454 datasheetAOD4454 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AOD4454 is a single N-channel enhancement-mode MOSFET designed to operate with dual gate logic that provides enhanced logic levels, improved RF performance, enhanced temperature and voltage characteristics, and improved dynamic characteristics. It is a special type of transistor which has two gates instead of one and is hence known as a dual gate device. This device is highly recommended for use in applications where high current, high voltage, and high frequency environments exist.

AOD4454 is well suited for signal conditioning, power supply control, RF switching, and other analog applications. The device features low on-resistance and fast switching speed which makes it ideal for frequency switching applications. Its built-in thermal protection feature also makes it useful in temperature controlling applications.

The device\'s working principle is based on Field Effect Transistor (FET). FETs are a type of active semiconductor device, which operates on the principle of controlling the current flow in the channel of a semiconductor material by the application of an electrical field (voltage). FETs are basically three-terminal devices consisting of gate, source and drain terminals. The gate terminal is sensitive to applied voltage, and the source and drain terminals differ in voltage. When an electrical field is applied to the gate, charges are induced at the semiconductor surface, which form an inversion layer inside the channel. This channel forms a conducting channel between the source and the drain terminal. A current will flow in the channel and drain terminal only when the voltage applied to the gate terminal is greater than the sum of the threshold voltage and the FET\'s body (substrate) voltage.

The Drain-to-Source On-Resistance, RDS(ON), of the AOD4454 is very low in comparison to other types of transistors. This helps to provide improved efficiency in switching applications. As the drain-to-source resistance is very low, there is less power loss across the device during switching cycles, resulting in improved switching performance. The device also features low gate charge, which helps to reduce power consumption during switching cycles. Additionally, the device has an integrated bandgap voltage regulator, which helps to ensure reliable operation of the device in a variety of applications.

The AOD4454 is an interesting device in terms of its operation characteristics. It provides enhanced logic levels, improved RF performance, reliable operation over a wide temperature range, and improved dynamic characteristics. As such, it is a great choice for applications where high current, high voltage, and high frequency environments exist. It is also a good choice for signal conditioning, power supply control, RF switching, and other analog applications. Its low RDS(ON) and fast switching speed, combined with its built-in thermal protection and bandgap voltage regulator features make it a very good choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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