AOD4N60 Allicdata Electronics
Allicdata Part #:

785-1183-2-ND

Manufacturer Part#:

AOD4N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 4A TO252
More Detail: N-Channel 600V 4A (Tc) 104W (Tc) Surface Mount TO-...
DataSheet: AOD4N60 datasheetAOD4N60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOD4N60 is a type of transistor which has been designed for applications in the industrial, scientific and medical field. The design of AOD4N60 is based on an N-type (or N channel) MOSFET with an insulated gate. This type of transistor is widely used in low-noise and low-power devices, as well as in circuits that require speed control, digital logic and linear power amplifiers.

AOD4N60 is classified as a single MOSFET, which consists of a single source, drain and gate region. The source terminal connects to one side of the transistor and supplies electrons, while the other side acts as the drain, where unwanted charges are removed. The gate region is used to control the flow of current, and when correctly connected it allows a certain amount of current flow to be achieved.

The working principle of any MOSFET transistor is based on the MOS capacitor. This device is composed of two metal parts: a semiconductor and an insulator. When a voltage is applied to the gate of the transistor, it creates an electric field between the gate and the source, which forms a depletion region at the interface between the two. As a result, the potential barrier for electrons in this region decreases, and a current (I) can flow from the source to the gate.

Because of its low power requirements, AOD4N60 can be used in a number of applications, including power supply regulation, temperature control, timing and frequency control, digital logic circuits and audio amplifiers. Its low noise characteristics make it suitable for applications such as medical imaging systems and audio amplifiers. Its fast switching speed makes it an effective choice for motor control, speed control and switching applications.

AOD4N60 transistors are generally constructed with a small size, low power consumption and low cost, making them an ideal choice for applications that require high performance and low costs. In addition, they can also be used in various industrial and automotive fields. With their low power consumption and fast switching speed, these transistors are perfect for applications that require accuracy and speed, such as servo systems, automotive electronics, and consumer electronics.

By applying different voltage and current levels to the gate, the resistance of the channel can be changed, allowing for precise control of the current passing through the AOD4N60. This allows for more precise control of the current passing through and makes it suitable for applications such as pulse width modulation and precise analog control.

Overall, the AOD4N60 is a highly useful type of transistor and can be used in a variety of applications. It has low power consumption, low cost, high accuracy and fast switching speed, which makes it an excellent choice for various electronic and medical applications. With its low noise characteristics, it is also suitable for medical imaging and audio amplification.

The specific data is subject to PDF, and the above content is for reference

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