AOD4S60 Allicdata Electronics

AOD4S60 Discrete Semiconductor Products

Allicdata Part #:

785-1265-2-ND

Manufacturer Part#:

AOD4S60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 4A TO252
More Detail: N-Channel 600V 4A (Tc) 56.8W (Tc) Surface Mount TO...
DataSheet: AOD4S60 datasheetAOD4S60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 56.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: aMOS™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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AOD4S60 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can be used in both switching and linear applications.

In an enhancement mode MOSFET, when controlled by a Voltage, current can flow across the output. The input Voltage determines the final operating point of the transistor; this makes it an ideal dynamic control element.

The AOD4S60 is designed specifically for a wide range of applications, including power management and line-level conversions. It is highly integrated, with a low On Resistance, low Leakage Current, and low Threshold Voltage. It can also be used in audio pre-amp circuits, as well as various kinds of RF switching circuits.

The typical working principle of an AOD4S60 is similar to that of other enhancement mode MOSFETs. A gate electrode is connected to an input Voltage; this controls the amount of current that can flow through the two other electrodes. When the Voltage applied to the gate electrode is greater than the device’s threshold Voltage, the transistor is “on” and the current flow is the highest possible. When the Voltage is lower than the threshold Voltage, the transistor is “off” and the current flow is zero.

The AOD4S60 is a low-drain drain-source Voltage device, meaning that it can only be used in low-Voltage applications. It is also designed to handle large amounts of current, which makes it ideal for high power applications. Its low On Resistance enables low noise operation, which is important in audio applications. Its high gain and low gate-body capacitance make it capable of high-speed switching.

The AOD4S60 has found extensive use in a variety of applications, from power management to high-speed data communication. It is used in amplifiers, modulators, mixers, and various kinds of switching circuits. Its low On-Resistance also enables it to be used in line-level converters and current sensing applications.

The AOD4S60 is an easy-to-use, highly reliable, and cost-effective MOSFET for a wide range of applications. With its low On Resistance, low Leakage Current, and low Threshold Voltage, it is ideal for multiple applications. Its low gate-body capacitance makes it capable of high-speed switching, while its high gain and low input impedance make it suitable for audio circuits. The AOD4S60 is sure to be found in a variety of projects, both simple and complex.

The specific data is subject to PDF, and the above content is for reference

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