AOD4S60 Discrete Semiconductor Products |
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| Allicdata Part #: | 785-1265-2-ND |
| Manufacturer Part#: |
AOD4S60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 4A TO252 |
| More Detail: | N-Channel 600V 4A (Tc) 56.8W (Tc) Surface Mount TO... |
| DataSheet: | AOD4S60 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 263pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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AOD4S60 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can be used in both switching and linear applications.
In an enhancement mode MOSFET, when controlled by a Voltage, current can flow across the output. The input Voltage determines the final operating point of the transistor; this makes it an ideal dynamic control element.
The AOD4S60 is designed specifically for a wide range of applications, including power management and line-level conversions. It is highly integrated, with a low On Resistance, low Leakage Current, and low Threshold Voltage. It can also be used in audio pre-amp circuits, as well as various kinds of RF switching circuits.
The typical working principle of an AOD4S60 is similar to that of other enhancement mode MOSFETs. A gate electrode is connected to an input Voltage; this controls the amount of current that can flow through the two other electrodes. When the Voltage applied to the gate electrode is greater than the device’s threshold Voltage, the transistor is “on” and the current flow is the highest possible. When the Voltage is lower than the threshold Voltage, the transistor is “off” and the current flow is zero.
The AOD4S60 is a low-drain drain-source Voltage device, meaning that it can only be used in low-Voltage applications. It is also designed to handle large amounts of current, which makes it ideal for high power applications. Its low On Resistance enables low noise operation, which is important in audio applications. Its high gain and low gate-body capacitance make it capable of high-speed switching.
The AOD4S60 has found extensive use in a variety of applications, from power management to high-speed data communication. It is used in amplifiers, modulators, mixers, and various kinds of switching circuits. Its low On-Resistance also enables it to be used in line-level converters and current sensing applications.
The AOD4S60 is an easy-to-use, highly reliable, and cost-effective MOSFET for a wide range of applications. With its low On Resistance, low Leakage Current, and low Threshold Voltage, it is ideal for multiple applications. Its low gate-body capacitance makes it capable of high-speed switching, while its high gain and low input impedance make it suitable for audio circuits. The AOD4S60 is sure to be found in a variety of projects, both simple and complex.
The specific data is subject to PDF, and the above content is for reference
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AOD4S60 Datasheet/PDF