Allicdata Part #: | AOD4T60-ND |
Manufacturer Part#: |
AOD4T60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CHANNEL 600V 4A TO252 |
More Detail: | N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-2... |
DataSheet: | AOD4T60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOD4T60 is a Si N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is usually used for applications purposes. It features high efficiency, good electrical stability, and low on-state resistance. It is commonly found in various power applications and provides a reliable source of power.
The working principle of an AOD4T60 is relatively simple. It is an N-channel junction field-effect transistor (JFET) which contains four layers of semiconductor material; the gate, the source, the drain, and the body. The gate is an electrically isolated layer, and it is responsible for controlling the amount of current flow between the source and the drain. When the gate is positively charged, it acts as an insulating layer which stops the current from flowing between the source and the drain. When the gate is negatively charged, the insulator vanishes and lets the current flow.
The working of AOD4T60 is advantageous in several ways. It operates at low voltages with low power consumption and provides high switching speeds. As these transistors are controlled electronically, they are less likely to be affected by external noise and temperature changes. Moreover, AOD4T60 transistors have high thermal stability and provide a higher current flow ratio when compared to other MOSFETs.
AOD4T60 transistors are primarily used in power applications such as motor control, load switching, amplifier circuits, and other industrial applications. These transistors are also capable of providing power conditioning and voltage clamping. Additionally, they are used in system applications such as current sensing, temperature sensing, and load monitoring.
The structure of AOD4T60 transistors differs from standard junction field-effect transistors. Instead of using the N-type material for the source and the drain, this particular transistor utilizes an epitaxial layer of P-type material for the source and the drain. This increases the channel sheet resistance, resulting in better performance.
AOD4T60 transistors are designed for ease of use and are widely used for multiple voltage range applications. Moreover, this device can be manufactured in high volumes, making it widely available for various electronic projects. It is easy to handle and provides high performance at a low cost.
Overall, AOD4T60 is a highly efficient and reliable MOSFET transistor. Its simple structure and low power consumption make it suitable for many different applications. Its high speed operation and high current flow ratio make it a preferred choice for many power control and system applications. The device\'s low cost and high thermal stability are additional advantages that make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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