APT18M100B Allicdata Electronics
Allicdata Part #:

APT18M100B-ND

Manufacturer Part#:

APT18M100B

Price: $ 9.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 18A TO-247
More Detail: N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO...
DataSheet: APT18M100B datasheetAPT18M100B Datasheet/PDF
Quantity: 25
1 +: $ 8.31600
30 +: $ 6.81723
120 +: $ 6.15210
510 +: $ 5.15445
Stock 25Can Ship Immediately
$ 9.15
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4845pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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APT18M100B is a type of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a single-component device and is used in a wide number of applications. This type of transistor is highly versatile, offering high-speed switching, high noise immunity, and low-power consumption. In addition, it can be used in both analog and digital applications.

The working of APT18M100B is based on the principle of an insulated gate field effect transistor (IGFET). This device has an insulated gate which is used to control the source-drain junction voltage. In order to control the current flow through the drain/source path, a suitable gate voltage must be applied to the gate. When the gate voltage is higher than the source/drain voltage, the junction opens and current flows. When the gate voltage is lower than the source/drain voltage, the junction closes and current stops flowing.

APT18M100B is used in a variety of applications, including DC/DC conversion, pulse applications, linear regulation, and high-speed switching. It has some advantages over other MOSFETs due to its voltage temperature coefficient, temperature stability, and low operating current. In addition, it is compatible with all standard ESD (ElectroStatic Discharge) protection circuits and has low gate leakage current.

APT18M100B is a very versatile component and is suitable for use in a wide range of applications. In DC/DC conversion applications, it can be used to regulate voltage to maintain a constant output voltage regardless of load variation. It is also useful in pulse applications, where it can be used to regulate the output current and reduce the effect of noise and transient spikes on the output signal. In linear regulation applications, it can be used to provide a linear signal even at high switching frequencies.

In addition, APT18M100B is also useful in high-speed switching applications. It is capable of switching signals quickly due to its low on-resistance, making it ideal for data communication systems. The low off-state leakage current also helps reduce interference in radio communication systems.

Overall, APT18M100B is an exceptionally versatile component and can be used in a wide range of analog and digital applications. Its insulated gate structure and low operating current help to ensure its performance and reliability, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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