Allicdata Part #: | APT14M100B-ND |
Manufacturer Part#: |
APT14M100B |
Price: | $ 5.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 14A TO-247 |
More Detail: | N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO... |
DataSheet: | APT14M100B Datasheet/PDF |
Quantity: | 1000 |
90 +: | $ 5.37803 |
Series: | POWER MOS 8™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
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The APT14M100B is a type of single field effect transistor (FET) that is designed to switch electrical signals from an input voltage source to an output voltage. This type of transistor is commonly used in the fields of semiconductor, electric and engineering applications, among others. They are most commonly found in the form of integrated circuits, but they can also be made up of a single transistor.
The APT14M100B consists of three elements, the source, gate and drain. The source provides an input voltage source, as does the drain, with the gate serving as the point at which voltage is applied to the transistor. When an electric signal is applied to the gate, it opens a “gateway” from the source to the drain, allowing current to flow from the source to the drain. This type of transistor is known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
The APT14M100B is most commonly used in applications requiring a low on resistance, high current and low power. The relatively low power requirement makes it an ideal choice for applications such as amplifiers, digital and analog circuits, converters, and switching regulators. The low power requirement is due to the fact that the gate, when switched on, draws nearly no current. As a result, the transistor has a very low gate leakage current, which reduces the overall power dissipation.
The APT14M100B also has an unusually large array of features, compared to other FETs. This includes the ability to operate in both n-channel and p-channel configurations, allowing for easy switching between different power levels. Additionally, the high speed switching is possible with this transistor, making it an ideal choice for applications that requires a fast response time. Another feature is its high gate polysilicon gate dielectric, which not only improves its high speed switching capability but also offers superior immunity to electrical noise.
In addition to its technical advantages, the APT14M100B also has several advantages in terms of cost and performance. Although this type of FET may be more expensive than its more basic counterparts, its superior performance and reliability are worth the extra cost. Also, the APT14M100B only requires a small conductive path, which reduces the total size of the circuit since fewer components are needed. This not only lowers the cost of the design but also increases its reliability.
In short, the APT14M100B is an excellent choice for applications that require a high level of switching performance and reliability. Its wide array of features make it an ideal choice for a multitude of applications, from amplifiers and digital circuits to energy converters and switching regulators. Although relatively expensive, it offers superior performance and is well worth the cost for many applications.
The specific data is subject to PDF, and the above content is for reference
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