APT20F50B Allicdata Electronics
Allicdata Part #:

APT20F50B-ND

Manufacturer Part#:

APT20F50B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 20A TO-247
More Detail: N-Channel 500V 20A (Tc) 290W (Tc) Through Hole TO-...
DataSheet: APT20F50B datasheetAPT20F50B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 500µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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APT20F50B Application Field and Working PrincipleAPT20F50B is a high-performance transistor of N-channel trench-gate field effect (FET) type, developed by the Advanced Power Technology Company, or APT. This transistor has a number of various applications, including load switching, amplifier design, power switching, and power conversion. Along with its performance in many areas, this model is renowned for its special conductivity characteristics, which allow it to more effectively operate within a wide range of specifications.The transistor comes with some of the common components, such as a gate, an emitter and a drain. The gate is a special connection bridge made up of metal contacts that allows a control signal to be sent to the transistor. The emitter is an output device through which a voltage is applied, while the drain is an input device that draws current from the transistor. This helps to direct the current input-output ratio of the device.The APT20F50B operates through the principles of FETs. FETs stands for Field-Effect Transistors and are semiconductor devices that conduct electric current. These are mainly used for power applications, and their mobility of electrons across the gate is responsible for their performance. It works in the same way as a MOSFET, which is a type of FET.In the case of the APT20F50B, the device’s N-channel design allows it to respond to surface changes in a way that makes it ideal for wide input ranges and high-current capability. By using an N-channel FET, the device’s total on-resistance is reduced, leading to lower power losses and more efficient current transfer.In addition, the APT20F50B is also designed to provide a reliable and repeatable performance. It has an ultra-low, 1.5-Volt gate source voltage, which requires little power and allows it to be used in applications where other devices may struggle. As well, the device’s low thermal resistance helps to reduce energy losses and provide greater current handling capability.The APT20F50B has been designed for a number of applications, including power switching, amplifier design, and power conversion. It links a control signal to a power or other current source, allowing it to reliably and accurately switch to target loads. It also makes a great choice for use in amplifier designs since its smooth transitions can easily accommodate the currents needed by the output of the amplifier. The APT20F50B can also be used in power conversion applications, allowing it to bridge the gap between two widely different circuits.The APT20F50B has provided an effective solution to many of the common issues associated with power and other applications. Its high performance, low voltage, and low thermal resistance make it an ideal choice for any number of projects. With its reliable and repeatable performance, and wide range of applications, the APT20F50B is a great choice for any number of devices and systems.

The specific data is subject to PDF, and the above content is for reference

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