| Allicdata Part #: | APT20F50B-ND |
| Manufacturer Part#: |
APT20F50B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 500V 20A TO-247 |
| More Detail: | N-Channel 500V 20A (Tc) 290W (Tc) Through Hole TO-... |
| DataSheet: | APT20F50B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 500µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 290W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2950pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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APT20F50B Application Field and Working PrincipleAPT20F50B is a high-performance transistor of N-channel trench-gate field effect (FET) type, developed by the Advanced Power Technology Company, or APT. This transistor has a number of various applications, including load switching, amplifier design, power switching, and power conversion. Along with its performance in many areas, this model is renowned for its special conductivity characteristics, which allow it to more effectively operate within a wide range of specifications.The transistor comes with some of the common components, such as a gate, an emitter and a drain. The gate is a special connection bridge made up of metal contacts that allows a control signal to be sent to the transistor. The emitter is an output device through which a voltage is applied, while the drain is an input device that draws current from the transistor. This helps to direct the current input-output ratio of the device.The APT20F50B operates through the principles of FETs. FETs stands for Field-Effect Transistors and are semiconductor devices that conduct electric current. These are mainly used for power applications, and their mobility of electrons across the gate is responsible for their performance. It works in the same way as a MOSFET, which is a type of FET.In the case of the APT20F50B, the device’s N-channel design allows it to respond to surface changes in a way that makes it ideal for wide input ranges and high-current capability. By using an N-channel FET, the device’s total on-resistance is reduced, leading to lower power losses and more efficient current transfer.In addition, the APT20F50B is also designed to provide a reliable and repeatable performance. It has an ultra-low, 1.5-Volt gate source voltage, which requires little power and allows it to be used in applications where other devices may struggle. As well, the device’s low thermal resistance helps to reduce energy losses and provide greater current handling capability.The APT20F50B has been designed for a number of applications, including power switching, amplifier design, and power conversion. It links a control signal to a power or other current source, allowing it to reliably and accurately switch to target loads. It also makes a great choice for use in amplifier designs since its smooth transitions can easily accommodate the currents needed by the output of the amplifier. The APT20F50B can also be used in power conversion applications, allowing it to bridge the gap between two widely different circuits.The APT20F50B has provided an effective solution to many of the common issues associated with power and other applications. Its high performance, low voltage, and low thermal resistance make it an ideal choice for any number of projects. With its reliable and repeatable performance, and wide range of applications, the APT20F50B is a great choice for any number of devices and systems.
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APT20F50B Datasheet/PDF