ARF442

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ARF442 stand for “Advanced RF FET” by Advanced Semiconductor Inc. It is an enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET), specifically optimized for high-frequency, high-voltage and high-power RF and microwave applications. ARF442 performs with power handling capabilities of up to 300 W pulsed, offers superior gain and noise figure performance, optimized frequency response, and excellent thermal stability characteristics within operating temperature range of -40 °C to 150 °C.

The ARF442 is designed primarily for use in high-frequency, high-power portable and hand-held RF communications products like cellular base station, amplifiers, and cellular infrastructure.

Working Principle

The ARF442 is a two-terminal transistor composed of a double gate (gate 1 plus gate 2) field-effect structure, with terminal Gate 1 (called the ‘control gate’) operating as the input terminal. Gate 2 operates as the output terminal, with the input signal driving to a greater or lesser degree the electric field generated across the MOSFET’s channel and hence controlling its current conduction. When a signal is applied to the control gate, it either reduces the size of the MOSFET\'s conductive channel (leaving \'holes\' in it and reducing the current) or enlarges it (allowing greater current conduction).

The ARF442 is manufactured in a low-know process technology. It is a low-noise, low-voltage semiconductor device that operates at high power levels compared to other RF MOSFET transistors. The gate oxide region of the device is completely depleted, thus allowing maximum power and gain to be achieved. Low-noise gate bias is maintained in the device by utilizing the depletion region created by the double gate structure. The device exhibits a high operating temperature range and high current handling capabilities.

Features of ARF442

• Low resistor noise
• High forward current/voltage ratio
• High frequency operation up to 10GHz
• High peak and average power output
• High breakdown voltage
• Low self-heating
• High thermal stability
• High power-added efficiency

Applications of ARF442

• Cellular base station amplifiers
• Point-to-point radio systems
• Communications satellites
• GPS receivers
• High-power mobile radio
• High-power microwave systems
• High-power RF power amplifiers

The ARF442 offers several advantages over traditional MOSFET transistors used in the same application area. It provides low noise, high-power gain and outstanding thermal stability over operating temperature range. The high current handling and low resistance noise allow for improved power efficiency and higher peak power capabilities. Furthermore, the device features a smaller footprint and improved robustness against sudden changes in temperature.

In conclusion, the ARF442 is a low-noise, low-voltage MOSFET transistor providing an ideal solution for high-frequency, high-power portable and hand-held RF communications products. It offers excellent thermal stability, high power gain and enhanced power efficiency in addition to its robust design. Thus making the ARF442 an ideal choice for any application where high-performance RF transistors are required.

The specific data is subject to PDF, and the above content is for reference