ARF447G

The ARF447G is a N-channel metal oxide semiconductor field effect transistor (MOSFET) designed specifically for use in electronic equipment for radio frequency (RF) applications. The device is designed for use in general purpose RF switching, low noise amplifiers, and other low power RF applications. This device is particularly suited for use in high reliability, high power, or high frequency applications, where its superior performance characteristics can be utilized.

The ARF447G is available in three different package types: an 8-lead surface mount SOIC package; a 9-lead TO-252 package; and a 10-lead TO-254 package. The SOIC package is the smallest of the three and has the lowest power dissipation rating. The other packages have higher power ratings, making them suitable for applications that require higher power dissipation.

The ARF447G operates in an N-channel configuration, meaning that the transistor\'s drain-source channel is typically reverse-biased between +5V and ground potential. The gate-source connection is connected to an AC voltage source to create an electrical field within the channel. This creates an electron-hole pair in the region between the source and the drain. By controlling the voltage on the gate, the strength of the field can be modified, allowing for current flow in one direction or the other.

The ARF447G has a maximum drain-source voltage rating of 30V, a maximum drain current of 10A, and a maximum gate voltage of 8V. The device is designed for use in both class A and class B amplifiers, and its gate capacitance is low enough to minimize gate-charging issues. The device also features low internal capacitance and low input capacitance, making it suitable for use in high frequency applications. Additionally, the device\'s low threshold voltage makes it suitable for use in low-voltage circuits.

The ARF447G is designed to provide excellent performance when used in RF applications such as FM transmitters, TV transmitters, broadcast amplifiers, and other RF and microwave amplifiers. The device\'s low side gate voltage capabilities, small package size, and low drain-source on-state resistance make it especially suited for low-noise, low-power, and high-reliability applications. Additionally, the device\'s high-frequency performance and high breakdown voltages enable it to be used in amplifier circuits operating up to 3GHz or higher.

In summary, the ARF447G is an N-channel RF MOSFET designed for use in high reliability, high power, and high frequency applications. The device features a low side gate voltage, a low drain-source on-state resistance, and a small package size, making it suitable for low-noise, low-power and high-reliability RF applications. Additionally, the device offers excellent performance at high frequencies, allowing it to be used in amplifiers operating up to 3GHz or higher.